Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Engineering Co., Ltd.

Hideshi Fukumoto

Toshiyuki Innami

Keiichi Mashino

Masayuki Shibata

Akira Mishima

Shinji Shirakawa

Tadasi Sonobe

Teruhiro Takizawa

Ken Yoshioka

Satoshi Nakamura

Yuichi Mabuchi

Fumio Suzuki

Yoko Kameoka

Takashi Kobayashi

Keizo Suzuki

Toshio Masuda

Toshio Sugano

Kenji Miyata

Makoto Koizumi

Motoo Suwa

Kohji Maki

Tetsunori Kaji

Tatsuya Nagata

Toru Otsubo

Akiyoshi Komura

Masaji Ishigaki

Hiroya Shimizu

Katsuya Watanabe

Naoki Maki

Katsuhiko Mitani

Ichiro Sasaki

Toshio Saitoh

Fumihiko Goto

Shigeru Sakamoto

Naoki Kasahara

Shigeru Shirayone

Shizuo Tsujimoto

Yuichi Ikeda

Jun'ichi Tanaka

The invention provides a method of calculating an equivalent circuit, which reduces the number of elements constituting a network to a large extent with a target accuracy secured. The method of the invention calculates an equivalent circuit by a computer, with regard to an object that has a conductor, a dielectric to support the conductor, and plural input/output terminals to the outside. Step 1 in the method receives inputs of geometry information to specify a shape of a conductor in a circuit board being the object of determining the equivalent circuit, and material information to specify a material of the circuit board; Step 2 partitions the shape of the objective conductor into meshes on the basis of the geometry information received, and creates mesh data to be expressed; Step 3 calculates a nodal admittance matrix from the mesh data, and stores the result; step 4 calculates the number of nodes and the number of independent networks on the basis of the mesh data, determines an incidence matrix, and determines the structure of an equivalent network by means of the calculated nodal admittance matrix and incidence matrix; and Step 5 determines the values of elements of the equivalent network.

Method of deducing equivalent circuit and system for the same

A semiconductor device is provided that reduces the number of external power terminals. The device is intended for a flip-chip type BGA (ball grid array) package. On the surface of the packet substrate are a plurality of output circuits each outputting a signal formed by an internal circuit, a first voltage supply electrode which supplies an operating voltage to the internal circuit and a plurality of second voltage supply electrodes which supply operating voltages to the output circuits. On the back surface of the package substrate are external terminals and a plurality of wiring layers.

Semiconductor device and an electronic device

A semiconductor apparatus includes positive and negative side conductors for bridge-connecting semiconductor switches, constituted to a wide conductor, and laminated by sandwiching an insulator between them. A semiconductor apparatus includes positive and negative side conductors extended from its case, and an electrolytic capacitor connected to the extension portion of the positive and negative side conductors. A power converter uses the semiconductor apparatus.

Semiconductor apparatus, power converter and automobile

A semiconductor power conversion device includes two bridge-connected semiconductor switches, an output terminal, and first and second pairs of positive and negative direct current terminals. First conductors connect the negative direct current terminals of the first and second pairs with the output terminal through one of the two bridge-connected semiconductor switches, while second conductors connect the positive direct current terminals of the first and second pairs with the other of the two bridge-connected semiconductor switches. A housing is provided, which includes the two bridge-connected semiconductor switches, and at least a portion of the first conductor and of the second conductor as a multilayer structure formed by sandwiching an insulator between the first and second conductors inside the housing. The first and second pairs of direct current terminals are arranged on one side of one plane of the housing.

Semiconductor device and electric power conversion device

A method of analyzing electromagnetic fields created in a rotary machine and an analyzer. The method and analyzer provide for an electromagnetic field in a total analysis space of a rotary machine including a stator space containing a stator and a rotor space containing a rotor to be analyzed to determined a boundary field between the stator space and the rotor space. The boundary field in a direction of rotation in modes is expanded and the modes obtained by expansion are converted into rotating magnetic field components. using the rotating magnetic field components as boundary conditions for a boundary between the stator space and the rotor space, an electromagnetic field in the stator space is analyzed and an electromagnetic field in the rotor space is analyzed.

Method of analyzing electromagnetic fields in rotary machine and electromagnetic field analyzer

A plasma display panel has a first substrate including a first dielectric layer which covers a plurality of address electrodes; back face barrier ribs, each of which is located between two neighboring address electrodes; a fluorescent layer which covers the back face barrier ribs and the first dielectric layer; and a second substrate including plural pairs of X sustain electrodes and Y sustain electrodes, which are arranged to cross at right angles to the address electrodes, and a second dielectric layer which covers the sustain electrodes. The first substrate is arranged opposite to the second substrate via a discharge space which is filled with gas for radiating ultraviolet rays to make the fluorescent layer emit light and buffer gas, and the thickness of the second dielectric layer in the second substrate is set to be larger at a portion between the X and Y sustain electrodes.

Plasma display panel

A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.

Plasma processing system and plasma processing method

In semiconductor modules having a plurality of semiconductor devices mounted on a multilayer printed circuit boards as the processing speed increases, a short circuit current flowing through CMOS devices in the semiconductor devices during operation can cause noise because of ground inductance or power supply inductance. This noise can result in erroneous operations. To solve this problem, the power supply layer or grand layer that is connected to either the power supply terminal Vcc or the ground terminal Gnd of each semiconductor memory, which is located farther from the connection terminals, is arranged closer to the semiconductor memories with this arrangement, the short circuit current flowing through the semiconductor memories is more strongly magnetically coupled with the power supply layer or ground layer arranged close to them. Thus, it is possible to reduce the effective inductance. This, in turn, reduces noise, making it possible to provide a semiconductor module with an increased processing speed.

Memory module and an IC card

A beam member which is installed at diametral portion in a ring shape superconducting coil container for supporting hoop stress of the coil, or a portion of radiant heat shield covering the beam member, is partly or entirely composed of electrical insulators or high resistivity materials. In accordance with the above composition, eddy current which is generated in the coil container when the superconducting coil container crosses magnetic field caused by eddy current which is generated in the radiant heat shield when the radiant heat shield crosses strong magnetic field caused by the superconducting coils with relative vibration of the radiant heat shield to the superconducting coil by a dynamic cause can be suppressed. Accordingly, heat generation in the superconducting coil container can be reduced, and consequently, generation of quenching can be prevented.

Superconducting magnet

There is disclosed a coil structure which can be rapidly energized or excited, and which reduces the generation of heat in a coil container by an eddy current due to a dynamic disturbance such as vibration and a magnetic field fluctuation, thereby suppressing the occurrence a quench. The coil container is constituted by a low-resistivity material, and a high-resistivity portion is provided at at least one portion of the coil container in the direction of the periphery of the coil container. The high-resistivity portion is provided at a position where a vibration displacement is small or a magnetic field fluctuation is small. When the coil structure is to be energized or excited, the eddy current produced in the direction of the periphery of the superconducting-coil container can be reduced at the high-resistivity portion, and when the dynamic disturbance develops, the generation of heat by the eddy current is suppressed by the low-resistivity material.

Coil structure and coil container

A levitation system of a magnetically levitated train is provided wherein superconducting magnets are installed in a car body, and the first layer and the second layer of levitation coils are so arranged as to be in a shifted location relative to each other in the moving direction of the train. By making the levitation coils two layers and by arranging the two layers in the shifted location relative to each other in the moving direction, amplitude of higher harmonic waves is reduced to a very small level, substantially to zero.

Levitation system of a magnetically levitated train

Growing community of inventors

Hitachinaka, Japan

Hideshi Fukumoto