Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Hideshi Abe

Yasushi Maruyama

Masanori Ohashi

Keiji Tatani

Mitsuru Sato

Hiroyuki Mori

Yoshiaki Kitano

Nobuhiro Karasawa

Hiroaki Ohki

Jun Kuroiwa

Tomoyuki Hirano

Yuki Miyanami

Atsuhiko Yamamoto

Kazufumi Watanabe

Yoshiki Ebiko

Yoshiaki Masuda

Atsushi Masagaki

Tomoharu Ogita

Masanari Yamaguchi

Masakazu Furukawa

Shiro Uchida

Ritsuo Takizawa

Kiyoshi Hirata

Mitsuru Yamashita

Katsunori Kokubun

Hideo Kanbe

Tomomasa Watanabe

Keiji Mabuchi

Takahisa Ueno

Akio Izumi

Atsushi Asai

Akiko Honjo

Takahisa Kusaka

Kazuya Yonemoto

Kazuichiro Itonaga

Hiroki Endo

Junji Yamane

Shinichi Ito

Hiroshi Yoshida

Yoshiyuki Enomoto

Tatsushiro Hirata

Shingo Takahashi

Kojiro Yagami

Nobuhiko Ohsawa

A distance measurement device according to the present disclosure includes: a laser irradiation unit that irradiates a measurement target with laser light; and a laser light receiving unit including a light receiving element that receives the laser light reflected by the measurement target on a pixel-by-pixel basis. Furthermore, the pitch of the unit pixels of the light receiving element varies with location in a light receiving pixel area. A mobile apparatus according to the present disclosure is equipped with a distance measurement device having the above configuration.

Distance measurement device and mobile apparatus

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

Image capturing apparatus including a compound semiconductor layer

An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

Imaging device and method for manufacturing the same

Solid-state imaging device with uneven structures and the method for manufacturing the same, and electronic apparatus

Solid-state imaging device and method for manufacturing electronic apparatus

Solid-state imaging device and method for manufacturing the same, and electronic apparatus

An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a reg between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Solid-state imaging device having an anti-reflection feature and method for manufacturing the same

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Kanagawa, Japan

Hideshi Abe