Semiconductor Energy Laboratory Co., Ltd.

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Hideomi Suzawa

Shunpei Yamazaki

Koji Ono

Shinya Sasagawa

Tetsuhiro Tanaka

Yoshihiro Kusuyama

Yasuhiko Takemura

Tatsuya Arao

Motomu Kurata

Hongyong Zhang

Hideto Ohnuma

Jun Koyama

Toru Takayama

Naoaki Yamaguchi

Masayuki Sakakura

Sachiaki Tezuka

Taiga Muraoka

Yasumasa Yamane

Toshimitsu Konuma

Hideki Uochi

Yutaka Okazaki

Yuhei Sato

Yasuyuki Arai

Yuta Endo

Ichiro Uehara

Akihisa Shimomura

Yoshitaka Yamamoto

Masashi Tsubuku

Akira Sugawara

Kazuya Hanaoka

Hirokazu Yamagata

Yukiko Uehara

Atsunori Suzuki

Hidekazu Miyairi

Atsuo Isobe

Hiromichi Godo

Daisuke Matsubayashi

Mayumi Mikami

Miyuki Hosoba

Yuji Egi

Shunichi Ito

Hirokazu Watanabe

Takayuki Inoue

Kunihiko Fukuchi

Kiyoshi Kato

Satoshi Teramoto

Mitsuhiro Ichijo

Naoki Okuno

Toshiya Endo

Michiko Takei

Hiroshi Fujiki

Suguru Hondo

Takahisa Ishiyama

Tatsuya Ohori

Kazuko Ikeda

Hiroyuki Miyake

Hisashi Ohtani

Junichi Koezuka

Takeshi Nishi

Satoshi Murakami

Yutaka Shionoiri

Masami Jintyou

Kensuke Yoshizumi

Junpei Momo

Satoru Okamoto

Toshihiko Saito

Yuichi Sato

Yoshinobu Asami

Katsuaki Tochibayashi

Toshihiko Takeuchi

Etsuko Fujimoto

Kiyofumi Ogino

Kosei Nei

Akihiro Ishizuka

Shinji Ohno

Akira Takenouchi

Takehisa Hatano

Akira Tsunoda

Takeshi Osada

Toshiji Hamatani

Yasuhiro Jinbo

Ryota Tajima

Koji Dairiki

Fumiaki Funada

Takuya Tsurume

Takeshi Fukada

Naoto Yamade

Tamae Moriwaka

Tsutomu Murakawa

Yumiko Saito

Takafumi Mizoguchi

Katunobu Awane

Tomohiko Sato

A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

Semiconductor device

A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

Semiconductor device and method for fabricating the same

A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Semiconductor device and method for manufacturing the same

A semiconductor device that can be highly integrated is provided. The semiconductor device includes first and second transistors and first and second capacitors. Each of the first and second transistors includes a gate insulator and a gate electrode over an oxide. Each of the first and second capacitors includes a conductor, a dielectric over the conductor, and the oxide. The first and second transistors are provided between the first capacitor and the second capacitor. One of a source and a drain of the first transistor is also used as one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is also used as one electrode of the first capacitor. The other of the source and the drain of the second transistor is also used as one electrode of the second capacitor. The channel lengths of the first and second transistors are larger than the lengths in a direction parallel to short sides of fourth and fifth conductors.

A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.

Semiconductor device and method for manufacturing semiconductor device

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Kanagawa, Japan

Hideomi Suzawa