Japan Science and Technology Agency

Semiconductor Energy Laboratory Co., Ltd.

Japan Science and Technology Corporation

Tokyo Institute of Technology

National Institute for Materials Science

Other

Matsushita Electric Industrial Co., Ltd.

Bridgestone Corporation

The University of Tokyo

Fuji Electric Corporate Research and Developement Ltd.

Hideomi Koinuma

Kawatetsu Mining Co., Ltd.

Kabushiki Kaisha Shinkosha

Japan Science and Technology Kawaguchi

Fuji Electric Co., Ltd.

Masashi Kawasaki

Yuji Matsumoto

Shunpei Yamazaki

Shigenori Hayashi

Ryota Takahashi

Yoshinori Konishi

Yoshiyuki Yonezawa

Kenji Itaka

Akiharu Miyanaga

Hikaru Kobayashi

Yoichi Okabe

Toyohiro Chikyow

Kazuo Fueki

Tadashi Shiraishi

Atsuki Inoue

Masatomo Sumiya

Masato Yoshikawa

Masashi Yoshimura

Takatomo Sasaki

Kazuhiko Omote

Tetsuo Kikuchi

Kazuo Naito

Yusuke Mori

Tohru Inoue

Yukihiro Kusano

Kota Terai

Toyohiro Chikyo

Nobuko Kato

Hideki Minami

Akira Ohtomo

Tsuyoshi Ohnishi

Parhat Ahmet

Shunroh Nagata

Yukio Yamamoto

Tomoteru Fukumura

Hitoshi Kawaji

Keiichirou Arai

Kazuhiro Takahashi

Takuzo Yonezawa

Kiyoto Inomata

Jeong-Hwan Song

Young Zo Yoo

Takuya Hashimoto

Fueki Kazuo

Mitsugu Yamashiro

Takashi Yasuda

Yusaburo Segawa

Eiji Fujimoto

Yoo Young Zo

Mikk Lippmaa

Young Zo c/o National Inst For Mat Sc Yoo

Jeong Hwan c/o Tokyo Institute Of Technology Song

Toyohiro c/o National Inst For Mat Sc Chikyo

Parhat c/o National Inst For Mat Sc Ahmet

Yoshiyuki c/o Fuji Electric Co R&D Ltd Yonezawa

Yoshinori c/o Fuji Electric Co R&D Ltd Konishi

It comprises a mask () having a first, a second and a third action edge (), and a drive means for moving the mask () relative to a substrate () in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120&#xb0; to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film

Masking mechanism for film forming apparatus

Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.

Device for vacuum processing

A BiTiOnanoplate, an array of such BiTiOnanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOis deposited on a SrTiO(001) faced substrate and then BiTiOis deposited on the flux layer. A BiTiOsingle crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.

Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them

To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

Method of making LC polymer film

A substrate having organic thin film capable of growing two dimensionally such organic thin film as Cand a transistor using the same are constituted with a substrate () having organic thin film by sequentially depositing a buffer layer () and organic thin film () on the substrate (), and with the buffer layer orienting the organic thin film (). A layer easily oriented with the substrate () and the buffer layer () may be inserted between the substrate () and the buffer layer (). A sapphire substrate as the substrate (), pentacene or pentacene fluoride as the buffer layer (), and Cor rubrene as the organic thin film () may be used, thereby Cor rubrene two dimensional thin film of high quality can be obtained. By using such a substrate () having organic thin film, a field effect transistor of high quality can be realized.

Substrate with organic thin film, and transistor using same

A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

Flux assisted solid phase epitaxy

The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (BiO)ABO, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0&#x3c;CuO/BiO&#x3c;2 and/or 0&#x2266;TiO/BiO&#x3c;7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi&#x2014;Ti&#x2014;O is supplied to the flux layer using a BiTiO, BiTiO, or BiTiOtarget of which the Bi content is greater than that of an object film such that a BiTiOsingle-crystalline thin-film is formed above the wafer.

Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element

A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (110) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (110) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

Thin film device and its fabrication method

A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate () made of SrTiOis formed at a first preestablished temperature thereon with a first epitaxial thin film () made of a first material, e. g., BaTiO, and then on the first epitaxial thin film () with a second epitaxial thin film () made of a second material, e. g., BaxSrTiO(where 0&#x3c;x&#x3c;1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations () introduced therein and the second epitaxial thin film () has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material. Selecting the ratio of components x of the other substance in the second material allows a desired in-plane lattice constant to be realized.

Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate

There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCaO(BO)family oxide single crystal thin film using the superflattening method, a ReCaO(BO)family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble even with a fluoric acid is allowed by reduction to be converted into a simpler oxide conventionally soluble with hydrochloric, nitric or sulfuric acid; hence a surface of its crystal is rendered capable of dissolving. Then, heat-treating the dissolved surface in the atmosphere at a suitable temperature for a suitable time period allows surface atoms to be rearranged and the surface to be superflattened to an atomic level. The present invention is applicable to the technical fields that require ultraviolet laser light, especially as core technologies of optical devices applied to optical information processing, optical communication or the like.

Method for flattening surface of oxide crystal to ultra high degree

The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

Method for preparing single crystal oxide thin film

A mixture of TiOand Co is placed in a vacuum chamber under selected oxygen pressure and irradiated in the vacuum chamber with a selected laser light to cause TiOand Co to evaporate from the target and a layer of TiO-Co to epitaxially grow on a heated single crystal substrate. The titanium dioxide-cobalt magnetic film for use in a photocatalyst, a semiconductor material having optical, electrical and magnetic functions, and a transparent magnet. The film is expressed by TiCoOwhere 0&#x3c;x&#x2266;0.3, and wherein a Ti atom at its lattice position is replaced with a Co atom. The film has anatase or rutile crystalline structure, has its band gap energy varying in a range between 3.13 eV and 3.33 eV, retains its magnetization even at a temperature higher than a room temperature, and is transparent to visible light.

Titanium dioxide cobalt magnetic film and its manufacturing method

A method and device for measuring thermoelectric characteristics of a combinatorial sample. The method and device are useful for rapid sample evaluation, the investigation of thermoelectric materials, and the carrier control of semiconductors. The device includes combinatorial samples patterned with a metal mask, a pair of sample holders for applying a small temperature gradient to the sample, a thermocouple for measuring the temperature gradient, and a probe pin array in contact with the sample.

Method and device for measuring thermoelectric characteristics of combinatorial specimen

The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Thin film device

A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

Composite integrated circuit and its fabrication method

Growing community of inventors

Tokyo, Japan

Hideomi Koinuma