Denka Company Limited

Denki Kagaku Kogyo Kabushiki Kaisha

Hideo Tsukamoto

Hideki Hirotsuru

Yosuke Ishihara

Takeshi Miyakawa

Goh Iwamoto

Akira Miyai

Hiroaki Ota

Shinya Narita

Kazunori Koyanagi

Satoshi Higuma

Yoshio Sasaki

Nobuyuki Hashimoto

Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

Aluminum-diamond-based composite and heat dissipation component

A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 &#x3bc;m and 55-195 &#x3bc;m, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 &#x3bc;m and 45-205 &#x3bc;m is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

Heat dissipation component for semiconductor element

An aluminum-diamond composite that exhibits both high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, and that can suppress the occurrence of swelling, etc., of a surface metal layer portion even in actual use under a high load. An aluminum-diamond composite includes 65-80 vol % of a diamond powder having a roundness of at least 0.94, for which a first peak in a volumetric distribution of grain size lies at 5-25 &#x3bc;m, and a second peak lies at 55-195 &#x3bc;m, and a ratio between the area of the volumetric distribution of grain sizes of 1-35 &#x3bc;m and the area of the volumetric distribution of grain sizes of 45-205 &#x3bc;m is from 1:9 to 4:6; the balance being composed of a metal containing aluminum.

Aluminum-diamond composite, and heat dissipating component using same

Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 &#x3bc;m in film thickness, (2) an Ni layer 1-5 &#x3bc;m in film thickness, and (3) an Au layer 0.05-4 &#x3bc;m in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.

Heat dissipating component for semiconductor element

A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride, silicon nitride, diamond, graphite, yttrium oxide, and magnesium oxide and has a porosity that is 10 to 50 volume % and a three-point bending strength that is 50 MPa or more. The porous body is infiltrated, by means of liquid metal forging, with aluminum alloy or pure aluminum at an infiltration pressure of 30 MPa or more, cut and/or ground to a thickness of 0.05 to 0.5 mm and to a surface roughness (Ra) of 0.01 to 0.5 &#x3bc;m, then is formed with a metal layer comprising one or more elements selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn on its surface to a thickness of 0.5 to 15 &#x3bc;m, so as to thereby produce the composite substrate for the LED light emitting element.

Composite substrate for LED light emitting element, method of production of same, and LED light emitting element

Disclosed is a clad material for an LED light-emitting element holding substrate in which a plurality of layers composed of different materials are stacked and bonded via a metal layer to a III-V group semiconductor crystal surface, the linear expansion coefficient being 14&#xd7;10/K or less and the thermal conductivity at a temperature of 25&#xb0; C. being 200 W/mK or greater. The clad material is composed of three alternately stacked layers: two copper layers and a molybdenum layer, the molybdenum layer being 10 to 60 vol % and the difference in thickness between the copper layers being 5% or less; or a clad material composed of three copper layers alternately stacked with molybdenum layers to make five layers, the molybdenum layers being 20 to 70 vol % and the difference in thickness between the top and bottom two copper layers and the molybdenum layers being 5% or less.

Clad material for LED light-emitting element holding substrate, and method for manufacturing same

Disclosed is an aluminum-diamond composite having both high thermal conductivity and thermal expansion coefficient close to those of semiconductor elements, which is improved in platability in the surface and surface roughness so that the composite becomes suitable for use as a heat sink of a semiconductor element of the like. Specifically disclosed is a plate-like aluminum-diamond composite containing diamond particles and a metal mainly composed of aluminum. The aluminum-diamond composite is composed of a composite part and surface layers formed on both sides of the composite part, and the surface layers are composed of a material containing a metal mainly composed of aluminum. The diamond particle content is 40-70% by volume of the entire aluminum-diamond composite.

Aluminum-diamond composite and manufacturing method

Provided is a wafer for LED mounting having a small difference in thermal expansion coefficient from an LED and having excellent heat conductivity, a method for manufacturing the wafer for LED mounting, and an LED-mounted structure manufactured by using the wafer for LED mounting. The wafer for LED mounting () is constituted of a metal infiltrated ceramic composite () and a protective layer () that is formed therearound. The metal infiltrated ceramic composite () preferably has a thin metal layer () on a surface thereof. The method for manufacturing the wafer is characterized by comprising filling at least one selected from the group consisted of porous ceramic bodies, ceramic powder compacts and ceramic powders into a tubular body made of metal or ceramic, then impregnating a metal into the void of at least one selected from the group consisted of porous ceramic bodies, ceramic powder compacts and ceramic powders, and thereafter performing a process.

Wafer for LED mounting, method for manufacturing same, and LED-mounted structure using the wafer

A process for the production of an aluminum-diamond composite, characterized by comprising the step of preparing a diamond powder having a specific diameter, the step of adding a colloidal silica to the diamond powder to form a slurry, the step of subjecting the slurry to press forming or slip casting to produce a compact of the diamond particles, the step of firing the compact either in air or in a nitrogen atmosphere to form a porous diamond preform, the step of heating the porous diamond preform, the step of heating an aluminum alloy to a temperature equal to or above the melting point of the alloy and impregnating the molten alloy into the porous diamond preform to make a flat plate-like aluminum-diamond composite wherein both surfaces are covered with surface layers containing an aluminum-base metal, and the step of working the aluminum-diamond composite into an aluminum-diamond composite.

Manufacturing method of aluminum-diamond composite

An aluminum-silicon carbide composite suitable for a base plate for power module, having an aluminum-silicon carbide composite, with a front and a rear surface plane, that is a flat plate-shaped silicon carbide porous body impregnated with a metal mainly containing aluminum, and an aluminum layer made of a metal mainly containing aluminum formed only on the front surface plane, wherein the rear surface plane of the composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is rectangular, optionally having peripheral portions encompassing holes removed. Plating is imparted to the composite by providing an aluminum layer on the rear surface plane. Flatness of the composite is improved by grinding its rear surface so that the composite is exposed to the outside. Warpage after grinding the rear surface, is controlled by controlling the thickness of the aluminum layer.

Aluminum-silicon carbide composite and heat dissipation device employing the same

A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 &#x3bc;m in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies, wherein the aluminum layers each has an average thickness of from 10 to 150 &#x3bc;m, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 &#x3bc;m, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 &#x3bc;m, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.

Growing community of inventors

Omuta, Japan

Hideo Tsukamoto