Nippon Electric Co., Ltd.

Nec Corporation

Hideo Takamizawa

Kazuaki Utsumi

Masanori Suzuki

Yuji Kajiwara

Yuzo Shimada

Michihisa Suga

Mitsuo Tsuzuki

Sadayuki Takahashi

Tsutomu Noguchi

Yasuhiro Kurokawa

Hidehiko Katoh

A method of manufacturing a ceramic electronic device includes the steps of: forming a pattern of a predetermined shape made of a photosensitive resin; forming an electrical circuit element on a ceramic green sheet; stacking and pressing the pattern, the ceramic green sheet having the electrical circuit element thereon, and at least one ceramic green sheet to prepare a laminated body; and sintering the laminated body. A ceramic electronic device integrally including a cavity and the electrical circuit element therein is manufactured by this method.

Method of manufacturing ceramic electronic device

Aluminum nitride ceramics is prepared by mixing acetylide of calcium, strontium, barium or other material with raw aluminum nitride powder with a content between 0.02 and 10 wt %, forming the mixture into a predetermined shape and sintering the formed body in a non-oxidizing atmosphere such as nitrogen gas by pressureless and/or pressure sintering technique.

Method for preparing aluminum nitride ceramics having superior thermal

A multilayer glass-ceramic substrate comprises insulator layers of a composition consisting essentially of, when components are expressed as oxides in percent by weight, 40-60 percent of aluminum oxide, 1-40 percent of lead oxide, 1-30 percent of boron oxide, 2-40 percent of silicon dioxide, 0.01-25 percent of at least one oxide of chemical element(s) of Group II of the periodic table, and 0.01-10 percent of at least one oxide of Group IV element(s) except carbon, silicon, and lead. Each insulator layer may be only from 190 microns down to 10 microns thick. The substrate has a flexural strength of 2,100 kg/cm.sup.2 or more. Preferably, the Group II element(s) is magnesium, calcium, strontium, barium, and/or zinc. The Group IV element(s) is zirconium, titanium, germanium, and/or tin. When the percentages are 40-60 for aluminum oxide, 4.1-16.6 for lead oxide, 1.0-10.0 for boron oxide, 14.0-39.1 for silicon dioxide, 0.1-4.8 for magnesium oxide, 2.0-10.0 for calcium oxide, 0.05-3.0 for barium oxide, 0.01-3.0 for zirconium oxide, and 0.01-2.5 for titanium oxide, the substrate has a flexural strength of 3,000 kg/cm.sup.2 or more and an interlayer leakage current of 8 microamperes or less. Each insulator layer has a structure of a vitreous network of borosilicate-lead series glass with the interstices occupied by crystals of aluminum oxide and microcrystalline structures which are obtained by reaction of aluminum oxide and glass of the borosilicate lead series.

Multilayer substrate including layers of an alumina and

The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO.sub.2 (0.7.ltoreq.x.ltoreq.0.95) and containing both 0.007 to 0.7 weight % of manganese and 0.037 to 3.7 weight % of zirconium, has a large dielectric constant, a small dielectric loss and a small temperature coefficient of dielectric constant and is uniform over a broad range, and especially it is possible to easily manufacture a substrate having a uniform dielectric constant and a uniform dielectric loss. Transistors and MIC's employing such substrates can attain uniform and excellent high-frequency characteristics.

(1-x)BaO.xTiO.sub.2 System dielectric material for use in a microwave

As an input and/or an output matching circuit for a transistor, a transistorized high-frequency power amplifier comprises at least one pattern of a conductive material on a sheet of a ferroelectric material placed on a conductive base plate in direct contact therewith. The ferroelectric material is represented by the formula:

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Tokyo, Japan

Hideo Takamizawa