Spansion Llc.

Fujitsu Amd Semiconductor Limited

Fasl LLC

Hideo Takagi

Takayuki Enda

Tatsuya Kajita

Masahiko Higashi

Yukihiro Utsuno

Hiroyuki Nansei

Kentaro Sera

Manabu Nakamura

Miyuki Umetsu

Tsukasa Takamatsu

Tatsuya Hashimoto

Toshiyuki Maenosono

Taiji Togawa

Taji Togawa

Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.

Method of fabricating semiconductor memory device and semiconductor memory device driver

A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (V) of the semiconductor memory device.

Semiconductor memory device and method of fabricating the same

After an ONO film in which a silicon nitride film () formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (), (), a bit line diffusion layer () is formed in a memory cell array region () by an ion implantation as a resist pattern () taken as a mask, then lattice defects are given to the silicon nitride film () by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

Semiconductor memory device and manufacturing method thereof

After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

Semiconductor memory device and method for manufacturing semiconductor device

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Aizuwakamatsu, Japan

Hideo Takagi