Fujitsu Corporation

Hideo Takagi

Yuzuru Ota

Kenichi Goto

Tatsuya Yamazaki

Atsuo Fushida

Wataru Futo

Keisuke Okazaki

Shigetaka Uji

Satoshi Otsuka

Nobuhiro Misawa

Takae Sukegawa

Masakazu Mori

Masataka Hoshino

Masataka Kase

Noriyuki Suzuki

Takashi Sakuma

Koji Endo

Hiroki Iio

Shyoji Hirao

Akihiro Yoshida

Yukihiro Satoh

Kinichirou Masuda

Kiyoshi Izumi

Yuzuru Ohta

The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250&deg; C.-450&deg; C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

Semiconductor device with copper wiring and its manufacture method

A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5&times;10,cm,; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film. Another method includes the steps of: forming a field oxide film on the surface of a silicon (Si) substrate for element isolation; implanting ions in the surface region of the Si substrate defined by the field oxide film to form a conductive silicon region; depositing a Co film on the Si surface extending to the field oxide film; heating the Si substrate under such conditions of a time and a temperature that does not allow CoSi,to be formed, and lets the Co film react with the conductive silicon region for silicidation, thereby forming Co silicide; removing an unreacted Co film; and subjecting the Si substrate to another heat treatment to convert the Co silicide to CoSi,.

Manufacture of semiconductor device with salicide electrode

A semiconductor device manufacturing method having a copper wiring, comprises the steps of forming a second insulating film for covering the wiring on a first insulating film, forming a third insulating film which is made of material different from the second insulating film on the second insulating film, coating a resist on the third insulating film and then forming an opening over the wiring by exposing and developing the resist, forming a hole or groove in the third insulating film by etching the third insulating film via the opening, removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove, and forming a metal film in the hole or groove.

Semiconductor device manufacturing method

A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.

The semiconductor device manufacturing method includes the step of forming a second tungsten film on a first tungsten film, which is formed by using a reduction gas not-containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film after the first tungsten film has been exposed to the gas containing the diborane.

A manufacturing method of a semiconductor device of the present invention comprises the steps of forming an amorphous layer on an upper layer of the impurity diffusion layer made of silicon by virtue of ion-implantation, forming a cobalt film on the impurity diffusion layer, forming a cobalt silicide layer made of Co.sub.2 Si or CoSi on an upper layer of the amorphous layer at a low temperature by reacting the cobalt film to silicon in the impurity diffusion layer in virtue of first annealing, then removing the cobalt film which has not reacted, and changing Co.sub.2 Si or CoSi constituting the cobalt silicide layer into CoSi.sub.2 to have low resistance and also rendering the cobalt silicide layer to enter into a depth identical to or deeper than an initial depth of the amorphous layer in virtue of second annealing.

Method of manufacturing semiconductor device

A monitored state display unit for a monitoring system which has an object of improving the response to information request and easily determining fault point/fault condition. The display unit comprises event state information processing means which requests a collecting device to collect event information, and gives instructions as to the screen display method according to the state on receipt of the response notification to collection request or the state change information from the collecting device, screen information control means which controls the output of updating/displaying of displayed screen to a display means and receives the instruction input from an instruction input means, and screen transmission information control means which requests information necessary for the screen to be displayed next from the event state information processing means on receipt of the notification of input of instruction information. The display unit further comprises display method defining information storing means for defining the method of displaying on-screen mark corresponding to the event state, screen definition information storing means for defining the displayed screen, and screen transition information storing means for storing the screen transition information. The event state information processing means handles the information which is not transmitted from the collecting device as information of unchanged state, and changes the method of displaying mark for the mark of fault point.

Monitored state display unit for monitoring state change of various

The surface of a barrier layer interposed between a silicon substrate and aluminum wiring connected thereto is oxidized by heat treatment at 350.degree. to 450.degree. C. in an atmosphere having substantially the same composition as that of air or immersion in an oxidizing chemical to form an oxide film on the surface, and a wiring layer is then formed thereon. The presence of the oxide film inhibits interdiffusion between the silicon substrate and the aluminum wiring and reaction between the aluminum wiring and the barrier layer. Since this oxide film is formed by oxidation at the atmospheric pressure, the oxide film is not excessively oxidized even if it is exposed in air at a relatively high temperature of about 300.degree. C. The oxide film having a thickness and properties which produce the tunnel effect can be formed with good reproducibility.

Method of producing semiconductor device

A first layer-wiring formed of a material soluble in a solution containing hydrofluoric acid (HF) is protected in an insulating layer. A second layer-wiring insulatingly overlying the first layer is connected with the first layer-wiring via a third layer-wiring which is resistant to a solution containing HF. When contact holes are opened through the insulating layer so as to lead out the first layer-wiring and/or a part of the semiconductor substrate, the first layer-wiring is not exposed to HF containing solution for cleaning the exposed materials in the opened holes. Accordingly, a material having small electrical conductivity but soluble by the HF can be employed for the layer-wiring allowing a high density integration as well good electrical contact with the Si substrate and with other multi-layer wirings.

Growing community of inventors

Kawasaki, Japan

Hideo Takagi