Sony Corporation

Kawasaki Steel Corporation

Hideo Suzuki

Takashi Obara

Susumu Sato

Shinichi Ogasawara

Susumu Satoh

Mitsumasa Kurosawa

Osamu Hashimoto

Kozo Tsunoyama

Minoru Nishida

Hisayoshi Yamoto

Mitsuyuki Banba

Hideki Matsuo

Yasuo Nakayama

Transmitter for a transceiver

Transceiver

The present invention relates to a method for soldering two kinds of parts, parts with leads and chip parts, on one-side printed board, comprising coating a cream solder on a plurality of points of a wiring pattern surface of one-side printed board and coating an adhesive for adhering parts with leads on a non-wiring pattern, adhering parts with leads to said non-wiring pattern surface by said adhesive, passing leads of the parts with leads through lead insert holes of said one-side printed board to insert the same into one cream solder on the wiring pattern surface from the side of the non-wiring pattern surface, mounting chip parts on the other cream solder on said wiring pattern surface, thereafter heating at once the whole cream solder on the wiring pattern to simultaneously reflow-solder the parts with leads and chip parts whereby the parts with leads and the chip parts can be simultaneously soldered by a single reflow soldering step.

Method for soldering two kinds of parts on one-side printed board

A cold-rolled steel sheet for deep drawing having an improved bake hardenability is disclosed, which comprises 0.005-0.015 wt% of C, not more than 1.0 wt% of Si, not more than 1.0 wt% of Mn, not more than 0.15 wt% of P, 0.0005-0.10 wt% of Al, not more than 0.003 wt% of S and not more than 0.004 wt% of N provided that S+N is not more than 0.005 wt%, and Ti satisfying 1.ltoreq.Ti*/C.ltoreq.20, in which Ti* (%)=Ti(%)-48/14N(%)-48/32S(%). Such a cold-rolled steel sheet is obtained by continuously annealing the steel sheet after the cold rolling, provided that a residence time over a temperature region above recrystallization temperature is within 300 seconds.

Method of manufacturing cold-rolled steel sheets

A cold-rolled steel sheet for deep drawing having an improved bake hardenability, which comprises 0.005-0.015 wt % of C, not more than 1.0 wt % of Si, not more than 1.0 wt % of Mn, not more than 0.15 wt % of P, 0.005-0.10 wt % of Al, not more than 0.003 wt % of S and not more than 0.004 wt % of N provided that S+N is not more than 0.005 wt %, and Ti satisfying 1.ltoreq.Ti*/C.ltoreq.20, in which Ti*(%)=Ti(%)-(48/14)N(%)-(48/32)S(%). Such a cold-rolled steel sheet is obtained by continuously annealing the steel sheet after the cold rolling, provided that a residence time over a temperature region above recrystallization temperature is within 300 seconds.

Cold-rolled steel sheets

A cold rolled dual-phase structure steel sheet having an excellent deep drawability is disclosed, which consists of ferrite phase and low temperature transformation product phase and comprises 0.001-0.008 wt % of C, not more than 1.0 wt % of Si, 0.05-1.8 wt % of Mn, not more than 0.15 wt % of P, 0.01-0.10 wt % of Al, 0.002-0.050 wt % of Nb and 0.0005-0.0050 wt % of B provided that the value of Nb(%)+10B(%) is in a range of 0.010-0.080%, and, if necessary, 0.05-1.00 wt % of Cr and the balance being substantially Fe with inevitable impurities. This steel sheet is manufactured by hot and cold rolling a steel slab with the above chemical composition and continuously annealing the resulting steel sheet in such a manner than the steel sheet is heated and soaked at a temperature from .alpha..fwdarw..gamma. transformation point to 1,000.degree. C. and then cooled at an average cooling rate of not less than 0.5.degree. C./sec but less than 20.degree. C./sec in a temperature range of from the soaking temperature to 750.degree. C., and subsequently at an average cooling rate of not less than 20.degree. C./sec in a temperature range of from 750.degree. C. to not more than 300.degree. C.

Method of making cold rolled dual-phase structure steel sheet having an

The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance. In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.

Method for manufacturing a semiconductor device

A cold rolled dual-phase structure steel sheet having an excellent deep drawability is disclosed, which consists of ferrite phase and low temperature transformation product phase and comprises 0.001-0.008 wt % of C, not more than 1.0 wt % of Si, 0.05-1.8 wt % of Mn, not more than 0.15 wt % of P, 0.01-0.10 wt % of Al, 0.002-0.050 wt % of Nb and 0.0005-0.0050 wt % of B provided that the value of Nb (%)+10B (%) is in a range of 0.010-0.080%, and, if necessary, 0.05-1.00 wt % of Cr and the balance being substantially Fe with inevitable impurities. This steel sheet is manufactured by hot and cold rolling a steel slab with the above chemical composition and continuously annealing the resulting steel sheet in such a manner than the steel sheet is heated and soaked at a temperature from .alpha..fwdarw..gamma. transformation point to 1,000.degree. C. and then cooled at an average cooling rate of not less than 0.5.degree. C./sec but less than 20.degree. C./sec in a temperature range of from the soaking temperature to 750.degree. C., and subsequently at an average cooling rate of not less than 20.degree. C./sec in a temperature range of from 750.degree. C. to not more than 300.degree. C.

Growing community of inventors

Chiba, Japan

Hideo Suzuki