Honda Giken Kogyo Kabushiki Kaisha

Honda Giken Kogyo K.k.

Honda Giken Kabushiki Kaisha

Hideo Seki

Sukeyuki Shinotsuka

Takashi Arai

Hiroshi Abe

Nobuhiro Fueki

Atsushi Nakajima

Makoto Furukawa

Koji Oda

Keiji Otsuka

Hiroyuki Kuki

Hironori Watanabe

Takeshi Morishita

Jiro Kirita

An image processing device and method which is provided with means for converting image data from an image sensor into image data emphasizing a change in brightness in each of plural divisions of a whole luminous area by using a conversion table and which is therefore capable of easily and immediately enhancing the contrast of an image taken by an image sensor possessing a wide dynamic range of its logarithmic output characteristic.

Image processing device and method capable of emphasizing the contrast of an image taken by an image sensor

A welding condition monitoring device for monitoring the welding state of a welding work portion by taking an image thereof by an image sensor having a wide dynamic range and capable of taking an image covering a very bright welding portion and relatively dark portion. The monitoring device selectively emphasizes the outputs of the image sensor for any of luminance areas of the image taken by the image sensor using a sensor output characteristic table and can provide an image clearly showing both the very bright welding portion and the dark bead portion with a sufficient contrast allowing an observer to reliably recognize the objects in the image.

Welding condition monitoring device

An image processing device for emphasizing a specified luminance area of an image taken by an image sensor. The contrast between a bright portion and a dark portion of an image taken by the image sensor having a wide dynamic range of a logarithmic output characteristic can be increased by selectively emphasizing the image sensor output of any luminance area by using an output characteristic conversion table.

Image processing device

A plurality of semiconductor circuits provided on a semiconductor wafer are arranged in a plurality of rows. The plurality of semiconductor circuits of each row are connected in series through first and second conductive layers provided between adjacent two of the semiconductor circuits of each row. The plurality of semiconductor circuits are connected to power supply terminals provided on the semiconductor wafer. The first and second conductive layers may be provided separately from the higher and lower voltage side power supply lines, or one of the first and second conductive layers may be common to one of the higher and lower voltage side power supply lines. The power supply is connected to the power supply terminals and the plurality of semiconductor circuits is aged. After the aging, the power supply is disconnected from the power supply terminals. In this state, electrical characteristics of each semiconductor circuit is measured in a state in which the semiconductor circuits is isolated from the other semiconductor circuits.

Method of measuring electrical characteristics of semiconductor circuit

A revolution-speed/temperature hybrid sensor includes a hybrid sensor unit which has a five-input-three-output convertor and outputs a revolution-speed/temperature hybrid signal, and a revolution-speed/temperature detector for separating the revolution-speed/temperature hybrid signal. The five-input-three-output convertor has an adder for adding the revolution speed signal of pulse waveform and temperature signal of analog form so as to generate a revolution-speed/temperature hybrid signal. By virtue of the five-input-three-output convertor, the revolution-speed/temperature hybrid sensor requires a smaller number of harnesses and is downsized compared to a conventional arrangement.

Hybrid sensor including a five-input-three-input converter generating a

In a signal processing apparatus, an analog signal inputted from, for example, a sensor is amplified by a amplifying circuit and is supplied to N comparing circuits (N is an integer equal to or more than 2). Each of the N comparing circuits is associated with a reference voltage and generates a comparison resultant signal based on the reference voltage in response to the amplified analog signal. N pulse generating circuits are provided for the N comparing circuits, respectively, and each of the N pulse generating circuits generates first and second pulse signals which indicate level transitions of the comparison resultant signal with respect to the corresponding reference voltage. A digital signal generating circuit composed of a flip-flop circuit generates a digital signal in response to the first and second pulse signals from each of the N pulse generating circuits.

Growing community of inventors

Sayama, Japan

Hideo Seki