Kabushiki Kaisha Toshiba

Sumitomo Electric Industries, Limited

Other

Toshiba Memory Corporation

Hideo Numata

Hideto Furuyama

Chiaki Takubo

Kazumasa Tanida

Hiroshi Hamasaki

Atsushi Yoshimura

Naoyuki Komuta

Satoshi Hongo

Kenji Takahashi

Tetsuya Kurosawa

Wataru Sakurai

Naoko Yamaguchi

Keisuke Tokubuchi

Mie Matsuo

Kazuhito Saito

Shinya Takyu

Takashi Imoto

Tsuyoshi Matsumura

Takashi Shirono

Hideo Aoki

Ichiro Omura

Hisashi Kaneko

Hirokazu Ezawa

Kenichi Matsushita

Mitsuaki Tamura

Masaki Tsujimoto

Kenji Kobayashi

Eiji Takano

Yoshihisa Imori

Masahiro Sekiguchi

Masayuki Dohi

Susumu Harada

Takahito Nakazawa

Akihiro Hori

Mari Otsuka

Hiroshi Ikenoue

Toyohiko Takeda

Tomio Minohoshi

Hiroyuki Okura

A manufacturing method of an electronic device processes a surface of a first wafer, bonds a surface of a second wafer to the processed surface of the first wafer, thins the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface, forms a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade, attaches a protective layer to the back surface of the first wafer having the groove, via a bonding layer, and polishes a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.

Manufacturing method of electronic device and manufacturing method of semiconductor device

A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.

Stacked electronic component and manufacturing method thereof

A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

Semiconductor device and manufacturing method of semiconductor device

According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Manufacturing method of semiconductor device, semiconductor substrate, and camera module

According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an insulating film, on a surface of the semiconductor substrate including a surface exposed by the polishing.

Method of manufacturing semiconductor device, semiconductor device, and camera module

In one embodiment, a method for manufacturing a semiconductor device includes following steps. An aperture is formed in an interlayer insulating film formed on a semiconductor wafer apart from an integrated circuit portion by etching process. The interlayer insulating film has a dielectric constant smaller than a silicon oxide film (SiO), and the width of the aperture is larger than a dicing region. A resin layer is embedded in the aperture. An adhesive layer is formed on the interlayer insulating film and the resin layer. The semiconductor wafer is attached to a glass substrate using the adhesive layer by Face Down method. The semiconductor wafer, the resin layer, and the adhesive layer on a dicing region are cut by blade dicing. The semiconductor wafer and the glass substrate adhered to the semiconductor wafer are cut into pieces by the blade dicing of the glass substrate under the dicing region.

Semiconductor device and method for manufacturing the same

According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on the active layer, an insulating layer provided to cover the wiring layer, and a supporting substrate joined to the semiconductor substrate via the insulating layer to face the first surface of the semiconductor substrate. A joined body of the semiconductor substrate and the supporting substrate includes an intercalated portion provided between its outer peripheral surface and the active surface. The intercalated portion is provided to penetrate the semiconductor substrate and the insulating layer from the second surface of the semiconductor substrate and to reach inside the supporting substrate.

According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.

An optical module, including: an optical transmission line holding member having an optical semiconductor element mounting surface, an electrical interconnection layer formed on the mounting surface, and an optical transmission line guide hole with an opening on the mounting surface; an optical transmission line inserted into the guide hole; an optical semiconductor element, mounted on the mounting surface, having an electrode and a light-receiving or light-emitting area on a surface facing the mounting surface; an electrical connection portion which electrically connects the electrode and the interconnection layer, formed between the semiconductor element and the mounting surface; a first resin filling a space around the connection portion between the semiconductor element and the mounting surface; and a second resin filling a gap between the optical transmission line and the semiconductor element, with a property different from that of the first resin, and a method of manufacturing the module.

Optical module and manufacturing method of the same

A flow of a resin which is injected for insert-molding a wiring plate into an end face of an optical fiber positioning component is regulated by regulating portions disposed in side portions of a die. Therefore, leads of the wiring plate can be prevented from being fixed while remaining to be positionally displaced by the force of the flowing resin. As a result, three-dimensional electrical wirings can be formed easily and correctly.

Method of producing optical fiber positioning component, and optical fiber positioning component

A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.

Semiconductor device having power semiconductor elements

Growing community of inventors

Yokohama, Japan

Hideo Numata