Renesas Electronics Corporation

Hideo Numabe

Tomoaki Uno

Nobuyuki Shirai

Hirokazu Kato

Kazuyuki Umezu

Hitoshi Matsuura

Koji Tateno

Yoshihiko Yokoi

Yusuke Ojima

Shinya Ishida

A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

Semiconductor device and semiconductor apparatus

A control electrode GEis formed in a lower portion of a trench TRformed in a semiconductor substrate SUB, and a gate electrode GEis formed in an upper portion inside the trench TR. An insulating film Gis formed between the control electrode GEand a side wall and a bottom surface of the trench TR, an insulating film Gis formed between the side wall of the trench TRand the gate electrode GE, and an insulating film Gis formed between the control electrode GEand the gate electrode GE. A region adjacent to the trench TRincludes an n-type semiconductor region NR for a source, a p-type semiconductor region PR for a channel formation, and a semiconductor region for a drain. A wiring connected to the control electrode GEis not connected to a wiring connected to the gate electrode GE, and is not connected to a wiring connected to the n-type semiconductor region NR for a source.

Semiconductor device

Growing community of inventors

Kanagawa, Japan

Hideo Numabe