Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Hideo Nikoh

Tomoyuki Sasaki

Takao Yamaguchi

Shinichi Imai

Nobuhiro Jiwari

Satoshi Nakagawa

Shoji Matsumoto

Shunsuke Kugo

Mitsuhiro Ohkuni

Kenji Tateiwa

Yoji Bito

Daihei Kajiwara

Hideo Ichimura

After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.

Method of manufacturing electronic device

A manufacturing apparatus for semiconductor devices comprises as a halogen scavenger a silicon ring (,) having an average surface roughness of 1-1000 &mgr;m, arranged around a silicon substrate (,) on a lower electrode (,) in a reaction chamber (,); and an upper silicon element (,) as another halogen scavenger, having an average surface roughness of 1-1000 &mgr;m, arranged above the silicon substrate (,). In this apparatus, C,F,is used as a gas to be introduced into the chamber (,) and fluorine can be effectively scavenged in the initial phase of operation, so that semiconductor devices can be aged faster than in conventional apparatus.

Semiconductor manufacturing apparatus

After an organic bottom anti-reflective coating (,) is deposited on an underlying film (,), a resist pattern (,) is formed on the organic bottom anti-reflective coating (,). Dry etching is performed with respect to the organic bottom anti-reflective coating (,) masked with the resist pattern (,) to form an anti-reflective coating pattern. The dry-etching of the organic bottom anti-reflective coating (,) is performed by using etching gas containing gas having the S component such as SO,/O,-based etching gas or COS/O,-based etching gas.

Pattern formation method

A semiconductor substrate which is placed on a bottom electrode inside a chamber is dry-etched by creating plasma inside the chamber. By making the average surface roughness Ra of the bottom surface of a quartz-top plate placed on the bottom electrode be in a range of 0.2 to 5 .mu.m, adhesion between the quartz-top plate and the deposits caused by the dry etching is enhanced, and the number of particles suspended in the chamber is reduced. Furthermore, the function of enhancing the adhesion of deposits can be maintained even after cleaning of the quartz-top plate. As a result, the number of particles which adhere onto the semiconductor substrate is reduced and the semiconductor substrate can be processed in an extremely clean atmosphere.

Apparatus and method of producing an electronic device

A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.

Apparatus and method for manufacturing semiconductor device

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Shiga, Japan

Hideo Nikoh