Mitsubishi Chemical Corporation

Hideo Namita

Yutaka Mikawa

Hideo Fujisawa

Shinichiro Kawabata

Tae Mochizuki

Kazunori Kamada

Hirotaka Ikeda

Atsuhiko Kojima

Yusuke Tsukada

Masayuki Tashiro

A conductive C-plane GaN substrate has a resistivity of 2&#xd7;10&#x3a9;&#xb7;cm or less or an n-type carrier concentration of 1&#xd7;10cmor more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2&#xb0;.

Conductive C-plane GaN substrate

A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 &#x3bc;m&#xd7;100 &#x3bc;m square, pit-free areas account for 80% or more of the plurality of sub-areas.

GaN single crystal and method for manufacturing GaN single crystal

A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within &#xb1;3&#xb0; from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask.

Method for growing GaN crystal and c-plane GaN substrate

A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.

Non-polar or semi-polar GaN wafer

A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 &#x3bc;m&#xd7;100 &#x3bc;m, pit-free areas account for 80% or more of the sub-areas.

An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.

Crystal of nitride of group-13 metal on periodic table, and method for producing the same

Method for growing GaN crystal and C-plane GaN substrate

A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side,

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Tokyo, Japan

Hideo Namita