Tokyo Electron Limited

Tokyo Electron Limi Ted

Hideo Nakamura

Junichi Kitagawa

Hiroaki Ashizawa

Jun Yamashita

Yoshikazu Ideno

Yosuke Serizawa

Seishi Murakami

Tsuyoshi Takahashi

Yoshiro Kabe

Yasushi Fujii

Yu Nunoshige

Kazuyoshi Yamazaki

Takashi Kamio

Seokhyoung Hong

Taichi Monden

Takaya Shimizu

Kazuhiro Isa

A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device

A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Semiconductor film forming method using hydrazine-based compound gas

A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

Film forming method and film forming apparatus

Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a YOfilm. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

Plasma processing apparatus

There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusionis formed at an inner peripheral surface of a cover member. The extended protrusionis formed toward a plasma generation space S and serves as a facing electrode facing an electrodewithin a mounting tablewith the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

Plasma processing apparatus and plasma processing method

A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cmto 2.13 W/cmper unit area of the workpiece.

Method and apparatus for forming silicon oxide film

Growing community of inventors

Yamanashi, Japan

Hideo Nakamura