Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Hideo Nakagoshi

Yoichi Takagi

Atsushi Shimizu

Yoshihito Otsubo

Issei Yamamoto

Hidekiyo Takaoka

Nobuaki Ogawa

Kiyoshi Kurihara

Akio Katsube

Hiroki Kitayama

Hidemasa Kawai

Norio Sakai

Tadashi Nomura

Kosuke Nakano

Toru Komatsu

Akihiko Kamada

Tetsuya Oda

Hideki Shinkai

Yuta Morimoto

Masaaki Mizushiro

Tsuyoshi Takakura

Yoshihisa Masuda

Hiroaki Tsuchida

Kosuke Nakono

Yoriyuki Matsumoto

The present disclosure is directed to an electronic component module including: a substrate; an electronic component mounted on the substrate; and a sub-module mounted on the substrate, the sub-module including a wiring board, a first electronic component disposed on one of two main surfaces of the wiring board, a second electronic component disposed on the other of the two main surfaces of the wiring board, and a first sealing member that covers the wiring board, the first electronic component, and the second electronic component.

Electronic component module, sub-module, and method for manufacturing same

A vacuum device includes a processing target placement unit that is arranged inside a vacuum chamber and a vacuum evacuation unit that is connected to the vacuum chamber. The processing target placement unit has one main surface on which processing targets are placed and a side surface that is connected to the one main surface. The processing target placement unit is provided with a plurality of grooves that have openings at the one main surface. When the processing target placement unit is viewed from the one main surface side thereof, the smallest width of the opening of each groove in the one main surface is equal to or less than half the smallest width of the processing target.

Vacuum device

The present disclosure improves the adhesive strength of a shield film in a high-frequency module that includes a shield film that shields components from unwanted electromagnetic waves from the outside. A high-frequency module is provided with: a sealing body that includes a multilayer wiring substrate, components that are mounted on an upper surface of the multilayer wiring substrate, and a sealing resin layer that is stacked on the upper surface of the multilayer wiring substrate and covers the components; and a shield film that covers a surface of the sealing resin layer. A side surface of the sealing body has curved surface portions formed so as to have a curved surface shape, and the curved surface portions are roughened with a plurality of grooves.

High-frequency module and manufacturing method therefor

A module includes a wiring board, a plurality of components mounted on an upper surface of the wiring board, a sealing resin layer which seals the components provided on the upper surface of the wiring board, and a shield layer provided so as to cover a surface of the sealing resin layer. The shield layer includes an adhesion layer which is stacked on the surface of the sealing resin layer and includes a first adhesion film composed of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl, a conductive layer which is stacked on the adhesion layer, and a protective layer which is stacked on the conductive layer and includes a protective film composed of a nitride, oxide, or oxynitride of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl.

Module and method for manufacturing same

A plating layer of a Cu-M-based alloy (M represents Ni and/or Mn) is formed on an end surface of a connection terminal member at an exposed side, the Cu-M-based alloy being capable of generating an intermetallic compound with an Sn-based low-melting-point metal contained in a bonding material forming a bonding portion and having a lattice constant different from that of the intermetallic compound by 50% or more. In the reflow process, even if the bonding material is about to flow out by re-melting thereof, since the bonding material is brought into contact with the Cu-M-based plating layer, a high-melting-point alloy of the intermetallic compound is formed so as to block the interface between the connection terminal member and the resin layer.

Electronic component module

A bonding method that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 &#x3bc;m to about 50 &#x3bc;m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Bonding method for bonding metal plate and piezoelectric body

In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu&#x2014;Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more.

Electronic component module and method for manufacturing the same

An elastic material, in which at least the surface thereof is adhesive and conductive, is provided on a plate, and while a substrate constituting a component of an electronic part is held on the surface of the elastic material by the adhesiveness of the elastic material, an element such as a semiconductor chip is mounted at a fixed location on the substrate.

Holding jig for electronic parts

A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 &#x3bc;m to about 50 &#x3bc;m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Structure for bonding metal plate and piezoelectric body and bonding method

A semiconductor element is provided with a heat dissipating path defined by a non-through hole in a first principal surface and that is filled with a conductive material. The semiconductor element is bonded to a heat sink with the conductive material disposed therebetween. Solder can be used as the conductive material, for example. By introducing molten solder into the non-through hole while having solder disposed between the semiconductor element and the heat sink, the heat dissipating path is provided and the heat sink is bonded to the semiconductor element.

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Nagaokakyo, Japan

Hideo Nakagoshi