Matsushita Electric Industrial Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Panasonic Corporation

Other

Ricoh Company, Ltd.

Matsushita Electric Co., Ltd.

Matsushita Electronics Corporation

Shin-etsu Polymer Co., Ltd.

Hideo Nakagawa

Masaru Sasago

Fujio Yagihashi

Yoshitaka Hamada

Souichi Fukaya

Tsutomu Ogihara

Kouhei Sasamoto

Takeshi Asano

Motoaki Iwabuchi

Makoto Fujishima

Yukio Inazuki

Shinichi Imai

Yoshihiko Hirai

Hiroki Yoshikawa

Nobuo Aoi

Shigenori Hayashi

Tetsuya Yano

Masayuki Endo

Nobuo Iwata

Tomohiro Okumura

Noboru Nomura

Yasushi Nakazato

Hideo Kaneko

Ichiro Nakayama

Tetsuya Ueda

Tadashi Shinohara

Nobuaki Matsumoto

Tomonori Sato

Takayuki Kusunoki

Toshiya Sato

Hisashi Watanabe

Kenji Harafuji

Shuhei Ueda

Nobuhiro Ichiroku

Yoshinori Ogawa

Ryuji Koitabashi

Eiji Tamaoka

Yoshiaki Kakino

Hisashi Otsubo

Yoshinori Yamaoka

Tomoyasu Murakami

Kenshi Kanegae

Torao Takeshita

Yasunori Morinaga

Atsushi Ikeda

Kohei Otake

Taichi Koizumi

Tsutomu Suzuki

Toshio Hayashi

Yasuhiro Morikawa

Mitsugu Sugiyama

Mikio Nakajima

Shinichi Ohori

Hiroshi Fukuda

Masao Ando

Tsuneo Yamamoto

Keiji Ohori

Atsushi Wakamiya

Reiko Hinogami

Motonori Hanada

Yu Yoshioka

Mitsuhiro Okuni

Takeshi Anaso

Nobou Aoi

Norimichi Anazawa

Yuko Matsushige

Takahiro Kinoshita

Takuro Takasaka

F New Functional Materials Res Cen Yagihashi

M New Functional Materials Res Center Iwabuchi

Y New Functional Materials Research Cen Hamada

A stamp head unit including: a stamp component including at least a silicone-based rubber film on a quartz glass substrate; a stamp-component-holding component including a surface having a hole for vacuum suction of a surface of the quartz glass substrate of the stamp component; and a tubular component having an evacuation suction hole connected to communicate with the hole for vacuum suction so as to maintain a vacuum, and being coupled and fixed with the stamp-component-holding component. This provides: a stamp component that can be fixed stably by a simple and convenient vacuum chuck system; a stamp head unit with which the stamp component can be replaced in a short time; and a microstructure-transfer apparatus provided with the stamp component and the stamp head unit.

Microstructure-transfer apparatus, stamp head unit, stamp component for transferring microstructure, and method for transferring microstructure-integrated component

A hard mask filmprovided on substrateis formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film, the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

Blank for mold production and method for manufacturing mold

An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 &#x3a9;/cmwhen evaluated in terms of resistance values.

Inorganic material film, photomask blank, and method for manufacturing photomask

The method for manufacturing a photomask blank according to the present invention, when manufacturing a photomask blank having at least one functional layer on a transparent substrate, in a step of film-formation of such a functional film where the functional film includes a chromium-containing element and an a metallic element that is capable of bringing a mixture of the metallic element and the chromium into a liquid phase at a temperature of 400&#xb0; C. or lower, a chromium target (target A) and a target (target B) mainly containing at least one kind of the metallic element are simultaneously sputtered (co-sputtered). The present invention provides a technique for manufacturing a functional film having a small variation in its characteristics such as optical density and a low detect, and showing a high etching rate.

Photomask blank manufacturing method, photomask blank, photomask, and pattern transfer method

A photomask blank comprising a transparent substrate and a chromium-containing film deposited thereon is provided. The chromium-containing film comprises at least one CrC compound layer comprising up to 50 at % of Cr, at least 25 at % of O and/or N, and at least 5 at % of C. From the blank, a photomask having a photomask pattern formed on the substrate is produced, the photomask being used in photolithography of forming a resist pattern with a line width of up to 0.1 &#x3bc;m, using exposure light having a wavelength of up to 250 nm.

Photomask blank

In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400&#xb0; C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

Photomask blank, process for production of photomask, and chromium-containing material film

A light-shielding filmis formed on a transparent substrate. A hard mask filmis formed on this light-shielding film. The entire hard mask filmis made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shielding filmformed on a transparent substratehas a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The light-shielding filmhas an optical density of 2 or higher and 4 or lower and has a reflection-preventing function. The layer made of a chromium-containing material including tin, which constitutes the light-shielding film, can cause a significant increase in the etching rate at the time of chlorine-containing dry etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision.

Photomask blank, method for manufacturing photomask, and method for manufacturing phase shift mask

A half-tone phase shift filmand a light-shielding filmare stacked on transparent substrate. The light-shielding filmhas a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The half-tone phase shift filmis made of a molybdenum silicon nitride oxide. The layer made of a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry-etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision. The present invention provides a novel technique that can increase a dry-etching rate of a light-shielding film made of a chromium-containing material while assuring various characteristics required for the light-shielding film.

Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask

A power supply device includes: a main power supply configured to feed power to a load with constant-voltage output using an external power supply; an auxiliary power supply configured to feed power to the load using an internal power storage unit; a constant-current/constant-voltage switching power supply configured to feed a part of current flowing through the load by which part the current exceeds an upper limit value of output current of the main power supply instructed by a current upper-limit instruction unit, with the constant-current output from the auxiliary power supply; and an output switching unit switching the constant-current/constant-voltage switching power supply from the constant-current output to the constant-voltage output when a power cut monitoring unit determines stop of power supply from the external power supply.

Power supply device and control method for power supply

A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.

Method for fabricating semiconductor device

A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.

Method for manufacturing a semiconductor device

A partial denture having an artificial tooth, a denture base holding the artificial tooth, and a clasp fixed to the denture base, wherein the clasp includes a back-side arm and a front-side arm and does not include a rest, the back-side arm extending in a rearward bulging convex on a back side of a dentition-extended range of the denture base, the front-side arm extending in a forward bulging convex toward a front side of the dentition-extended range of the denture base, wherein the back-side arm and the front-side arm extend within a height range ranging from an extended plane of a top surface of a crown of the artificial tooth toward the denture base side.

Partial denture

Growing community of inventors

Shiga, Japan

Hideo Nakagawa