Toshiba Ceramics Co., Ltd.

Stk Ceramics Laboratory Corp.

The President of the Agency of Industrial Science and Technology

Other

Tokyo Shibaura Denki Kabushiki Kaisha

Hideo Nagashima

Hajime Saito

Junichi Matsushita

Hiroshige Suzuki

Eizi Horie

Hisashi Muraoka

Toshiro Usami

Shuitsu Matsuo

Masaharu Watanabe

Shinsuke Hayashi

Yasuhiro Imanishi

A sintered titanium boride ceramic body consists essentially of a matrix having a three-dimensional net-work structure and consisting essentially of TiC and at least one MB selected from transition metals in a mixing crystals and solid solutions condition, TiB.sub.2 particles separately placed in the matrix, and a grain boundary formed in the periphery of each of the TiB.sub.2 particles. The grain boundary is in a mixing crystals and solid solutions condition of TiB.sub.2 and M boride. M denotes a metal.

Titanium boride ceramic material

A sintered metal boride ceramic body consists essentially of: a metal boride matrix consisting essentially of MB or MB.sub.2 and TiC in a and solid solution and TiB.sub.2 particles dispersed in the metal boride matrix, wherein M denotes a metal such as Ni and Cr.

Metal boride ceramic material

A sintered metal boride ceramic body manufactured by mixing 75-99 wt. % of TiB.sub.2 powder with 1-25 wt. % in total of Ni powder and C powder to thereby make a mixture, shaping the mixture together with a binder to thereby make a shaped ceramic body, and firing the shaped ceramic body in a non-oxidizing atmosphere.

A method for manufacturing a metal boride ceramic material, includes mixing metal boride powder with 1-20 wt. % metal powder and 0.1-10 wt. % carbon powder, shaping the mixture and firing it. Alternatively, the metal boride powder may be mixed with 0.1-89 wt. % metal carbide powder thereby make a mixture, followed by shaping the mixture and firing it.

Method for manufacturing a metal boride ceramic material

An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.

Apparatus for producing a silicon single crystal from a silicon melt

A hot fluid-conducting pipe assembly, comprising an inner metal pipe through which flows a hot fluid,

Hot fluid-conducting pipe assembly

Wall structure of a hot fluid chamber, comprising

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Ebina, Japan

Hideo Nagashima