Hitachi Metals, Ltd.

Nec Corporation

Sony Corporation

Hideo Murata

Shigeru Taniguchi

Hideki Nakamura

Gang Han

Akitoshi Maeda

Kuniaki Yoshimura

Yoshihiro Yamamura

Shigeru Yamaguchi

Eiji Hirakawa

Akira Kawakami

Takehiko Sagara

Seisuke Ohba

Nobushige Akita

Tetsuya Itano

Kazuhiro Niino

Shigeyuki Ogawa

Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.

Aluminum alloy film for wiring and sputter target material for forming the film

There is provided a method of making a high-melting metal powder which has high purity and excellent formability and, particularly, of a metal powder of spherical particles made of Ta, Ru, etc. having a higher melting point than iron. There is also provided a target of high-melting metal or its alloy, which is made by the sintering under pressure of these powders and which has high purity and a low oxygen concentration and shows high density and a fine and uniform structure. A powder metal material mainly composed of a high-melting metal material is introduced into a thermal plasma into which hydrogen gas has been introduced, thereby to accomplish refining and spheroidizing. Further, an obtained powder is pressed under pressure by hot isostatic pressing, etc.

Sputtering target, method of making same, and high-melting metal powder material

A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.

Low resistive tantalum thin film structure and method for forming the

In a image pickup apparatus having three cameras for use in picking up a seamless panoramic image for a multi-screen, angles of view of the three cameras are jointed with each other without any overlapping or dead areas by making a side boundary line of one camera match with a complimentary side boundary line of another camera, the two outside cameras receiving an image in reverse through two reflection mirrors. The two reversed images are electrically or optically inverted by inversion sections to obtain original images.

Image pickup apparatus capable of preventing overlap or lack of image

Provided are a titanium target material which can easily form a film in a narrow and deep contact hole and reduce the generation of PARTICLES. The present invention relates to a titanium target for sputtering, wherein X-ray diffraction intensity ratios on a sputtering plane are (0002)/(1011).gtoreq.0.8, (0002)/(1010).gtoreq.6; a recrystallized structure which has an average crystal grain size of 20 .mu.m or less and in which the proportion of crystal grains in which an acicular structure is present is 20% or less in terms of an area rate is formed.

Titanium target for sputtering and production method for same

A chromium target is disclosed for use in the formation of chromium films or sheets of reduced thickness by means of sputtering. The target has a recrystallized structure represented by the equation, A/B.ltoreq.0.6, where A is the diffraction intensity of the (110) planes as determined by X-ray diffraction of a sputtered surface, and B is the diffraction intensity as determined from the sum of the (110), (200) and (211) planes. The target preferably has a deflective strength of above 500 MPa and an average crystal grain of below 50 .mu.m. The chromium target is produced by subjecting a starting chromium material to at least one stage of plastic working at a temperature of not higher than 1,000.degree. C., and subsequently by heat-treating the resulting chromium material for recrystallization at a temperature of higher than the recrystallization temperature of the chromium material but not higher than 1,200.degree. C.

Chromium target and process for producing the same

A sputtering target preferably having an average crystal-grain diameter of 300 .mu.m or less and a maximum magnetic permeability of 100 or less is formed of an alloy consisting essentially of, by atom, 5- 30% Ni, 5- 14% Cr, not more than 6% V, and balance of Co and unavoidable impurities. It is preferable for the target to keep a working-strain remaining therein to reduce the maximum magnetic permeability. A method of producing a sputtering target for magnetic recording and reproducing, in which warm working or cold working is applied to the alloy.

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Tottori-ken, Japan

Hideo Murata