Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kioxia Corporation

Toshiba Memory Corporation

Hideo Mukai

Naoya Tokiwa

Hiroshi Maejima

Katsuaki Isobe

Toshimasa Takano

Minoru Yoshida

Tsuneo Inaba

Satoru Takase

Kaoru Nakagawa

Yoshitsugu Nakatomi

Tsuyoshi Ueno

Yasuyuki Fukuda

Tomoyuki Asada

Sachiko Yasuda

Shinichi Hashimoto

Masahiro Hosoya

Takayuki Watanabe

Goro Oda

Takashi Shimazaki

Koichi Kinoshita

Kohachi Uchida

Osamu Nagao

Takaaki Konuma

Tomoyuji Asada

A three-dimensionally stacked nonvolatile semiconductor memory of an aspect of the present invention including conductive layers stacked on a semiconductor substrate in such a manner as to be insulated from one another, a bit line which is disposed on the stacked conductive layers, a semiconductor column which extends through the stacked conductive layers, word lines for which the stacked conductive layers except for the uppermost and lowermost conductive layers are used and which have a plate-like planar shape, memory cells provided at intersections of the word lines and the semiconductor column, a register circuit which has information to supply a potential suitable for each of the word lines, and a potential control circuit which reads the information retained in the register circuit in accordance with an input address signal of a word line and which supplies a potential suitable for the word line corresponding to the address signal.

Three-dimensionally stacked nonvolatile semiconductor memory

A nonvolatile-semiconductor-memory-device including a cell array having a plurality of MATs (unit-cell-array) disposed in a matrix, the MATs each include a plurality of first lines, a plurality of second lines crossing the first lines, and memory cells being connected between the first and second lines. The device further includes a first and second drive circuit selecting the first and second lines connected to the memory cells of each MAT that are accessed, and driving the selected first and second lines to write or read data. The memory cells form a page by being connected to each first line selected from the MATs. The device also includes a data latch latching the write or the read data in units of pages, where the first and second drive circuit drive the first and second lines multiple times to write or read data for one page in and out of the cell array.

Nonvolatile semiconductor memory device

A nonvolatile semiconductor storage device includes first and second intersecting wires; a electrically rewritable memory cell disposed at each intersection of the first second wires, including a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire to a standby voltage larger than a reference voltage prior to programming a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying to the selected first wire a program voltage for programming of the selected variable resistor and applying to the non-selected second wire a control voltage which prevents the rectifying device from turning ON.

Nonvolatile semiconductor storage device and data writing method therefor

A nonvolatile semiconductor storage device includes: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire up to a standby voltage larger than a reference voltage prior to a set operation for programming only a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying a program voltage necessary for programming of the selected variable resistor based on the reference voltage to the selected first wire and applying a control voltage which prevents the rectifying device from turning ON based on the program voltage to the non-selected second wire.

A semiconductor memory device comprises a semiconductor substrate; a memory block formed on the semiconductor substrate and including plural stacked cell array layers of cell arrays each comprising a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of contacts extending in the stack direction of the cell array layers and connecting the first lines in the cell arrays with diffusion regions formed on the semiconductor substrate. A certain one of the cell array layers is smaller in the number of the first lines divided and the number of contacts connected than the cell array layers in a lower layer located closer to the semiconductor substrate than the certain one.

Semiconductor memory device

A semiconductor memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain length data read out by the read/write circuit from plural ones of the memory cells with certain length data to be written in the plural memory cells to make a decision, and create a flag representing the decision result. The read/write circuit inverts each bit in the certain length data to be written in the memory cells in accordance with the flag, and writes only rewrite-intended data of the certain length data and the flag. The read/write circuit reads the certain length data together with the flag corresponding thereto, and inverts each bit in the certain length data in accordance with the flag.

Semiconductor memory device and semiconductor memory system

A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R, Rand R(R&#x3c;R&#x3c;R) are selectively set, wherein resistance gaps &#x394;R(=R&#x2212;R) and &#x394;R(=R&#x2212;R) are set to satisfy the relationship of &#x394;R&#x3e;&#x394;R

Resistance change memory device

In a control order of non-selected blocks at the time of data erase operation of one or a plurality of blocks, the control gate line is controlled to ground potential at first, then subsequently, a transfer transistor of the non-selected blocks is set to be an off-state. Next, high voltage is supplied to the well region and the data of the selected block is erased. Then, the control gate line is charged to the voltage which is used, for instance, at the time of reading out, or to the voltage (Vcg) which is used at the verification (Vcg). After the control gate line is charged to Vcg, the erase voltage supplied to the well region is discharged. Then, the control gate line is returned to ground potential after completing the discharge of the well region, and thus the data erase operation of the block is completed.

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Tokyo, Japan

Hideo Mukai