Hitachi High-Tech Corporation

Hitachi-High-Technologies Corporation

Hitachi, Ltd.

Hideo Morishita

Takashi Ohshima

Toshihide Agemura

Junichi Katane

Yoichi Ose

Teruo Kohashi

Tatsuro Ide

Michio Hatano

Sukehiro Ito

Mitsugu Sato

Tsunenori Nomaguchi

Yuta Imai

Naohiro Kohmu

Hiroyasu Shichi

Hiroyuki Yamamoto

Hiroya Ohta

Taku Sakazume

Kunio Harada

Yusuke Ominami

Momoyo Enyama

Kenko Uchida

Daisuke Bizen

Makoto Kuwahara

Ryo Hirano

Sadamitsu Aso

Yasuko Aoki

Minami Shouji

Yuusuke Oominami

Tetsuya Sawahata

An activation mechanism is provided in an activation region of an electron gun, and includes a light source deviceconfigured to irradiate a photocathode with excitation light, a heat generating element, an oxygen generation unit configured to generate oxygen by heating the heat generating element, and an emission current meter configured to monitor an emission current generated by electron emission when the photocathodeis irradiated with the excitation light from the light source device. In a surface activation process, the photocathode is irradiated with the excitation light from the light source device, an emission current amount of the photocathode is monitored by the emission current meter, the heat generating element is heated to generate oxygen by the oxygen generation unit, and the heating of the heat generating element is stopped when the emission current amount of the photocathode satisfies a predetermined stop criterion.

Electron beam application device

To implement a charged particle beam device including an iron thin film spin detector. The charged particle beam device includes: a charged particle columnconfigured to perform scanning on a samplewith a charged particle beam; a spin detector including an iron thin film, a plurality of coilsconfigured to magnetize the iron thin film, a conveying lensconfigured to focus, on the iron thin film, secondary electronsemitted from the sample due to irradiation of the charged particle beam, and an electron detectorconfigured to detect backscattered electronsemitted due to the iron thin film being irradiated with the secondary electrons; and a control unitconfigured to control switching of a magnetization direction of the iron thin film in synchronization with scanning of one line with the charged particle beam from the charged particle column.

Charged particle beam device

The apparatus includes: a photocathode including a substrate and a photoelectric film formed on the substrate; a light source configured to emit a pulsed excitation light; a condenser lens facing the substrate of the photocathode and configured to condense the pulsed excitation light toward the photocathode; a first anode electrode and a second anode electrode facing the photoelectric film of the photocathode; a first power supply configured to apply a first control voltage between the first anode electrode and the second anode electrode; and a second power supply configured to apply an acceleration voltage between the photocathode and the second anode electrode. The first anode electrode is disposed between the photocathode and the second anode electrode. A surface of the first anode electrode facing the second anode electrode has a recessed shape, and a surface of the second anode electrode facing the first anode electrode has a protruding shape.

Electron gun and electron beam application device

The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

Electron gun and electron microscope

An electron beam emitted from a photoexcited electron gun is increased in luminance. An electron gunincludes: a photocathodeincluding a substrateand a photoelectric film; a light sourcethat emits pulsed excitation light; a condenser lensthat focuses the pulsed excitation light toward the photocathode; and an extractor electrodethat faces the photocathode and that accelerates an electron beam generated from the photoelectric film by focusing the pulsed excitation light by the condenser lens, transmitting the pulsed excitation light through the substrate of the photocathode, and causing the pulsed excitation light to be incident on the photocathode. The pulsed excitation light is condensed at different timings at different positions on the photoelectric film of the photocathode.

Electron gun and electron beam application apparatus

A charged particle beam device which prevents an appearance of a shading contrast due to azimuth discrimination and obtains a clear magnetic domain contrast image with a high resolution and a high throughput. The charged particle beam device includes an electron beam source; a sample stage; an objective lens configured to focus electron beams on a sample; a detector that is mounted on a charged particle beam source side with respect to the objective lens and separately detects secondary electrons emitted in azimuth angle ranges of two or more different azimuths for the same observation region; an image processing and image management device including an image processing unit configured to perform synthesis after performing shading correction and contrast adjustment on an image obtained by detecting a first emission azimuth and an image obtained by detecting a second emission azimuth; an image database; and an image display unit.

A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

Electron beam apparatus

A scanning electron microscope includes a spin detector configured to measure secondary electron spin polarization of secondary electrons emitted from the sample, and an analysis device configured to analyze secondary electron spin polarization data measured by the spin detector. The analysis device evaluates the strain in the sample by calculating a difference in the secondary electron spin polarization data of adjacent pixels.

Scanning electron microscope

Provided is a scanning electron microscope provided with an energy selection and detection function for a SEgenerated on a sample while suppressing the detection amount of a SEexcited due to a BSE in the scanning electron microscope that does not apply a deceleration method. Provided are: an electron optical system that includes an electron sourcegenerating an irradiation electron beam and an objective lensfocusing the irradiation electron beam on a sample; a detectorthat is arranged outside an optical axis of the electron optical system and detects a signal electron generated when the sample is irradiated with the irradiation electron beam; a deflection electrode that forms a deflection fieldto guide the signal electron to the detector; a disk-shaped electrodethat is arranged to be closer to the electron source than the deflection field and has an opening through which the irradiation electron beam passes; and a control electrode arranged along the optical axis to be closer to the sample than the deflection field. The sample and the objective lens are set to a reference potential. A potential lower than the reference potential is applied to the disk-shaped electrode, and a potential higher than the reference potential is applied to the control electrode.

A scanning electron microscope includes a spin detector configured to measure spin polarization of a secondary electron emitted from a sample, and an analysis device configured to analyze measurement data of the spin detector. The analysis device determines a width of a region where the secondary electron spin polarization locally changes in the measurement data. The analysis device further evaluates a strain in the sample based on the width of the region. With a configuration of the scanning electron microscope, it is possible to perform analysis of a strain in a magnetic material with high accuracy.

Scanning electron microscope and method for analyzing secondary electron spin polarization

A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.

Spin polarimeter

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lensprimary electron acceleration meansthat accelerates primary electronsprimary electron deceleration meansthat decelerates the primary electrons and irradiates them to a samplea secondary electron deflectorthat deflects secondary electronsfrom the sample to the outside of an optical axis of the primary electrons; a spectroscopethat disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

Scanning electron microscope and electron trajectory adjustment method therefor

The purpose of the present invention is to eliminate the effort in placement and extraction of samples in observations using transmitted charged particles. A charged particle beam device () is characterized by having: a charged particle optical lens tube that irradiates a sample () with a primary charged particle beam; a sample stage on which a light emitting member () that emits light because of charged particles that have come by transmission internally in the sample () or scattering therefrom or a sample platform () having the light emitting member () is attachably and detachably disposed; and a detector () that detects the light emitted by the light emitting member.

Charged particle beam device, sample observation method, sample platform, observation system, and light emitting member

This composite charged particle beam device comprises a first charged particle beam column (), a second charged particle beam column () which is equipped with a deceleration system, and is equipped with a detector () inside the column, a test piece stage () on which a test piece () is placed, and an electric field correction electrode () which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column.

Growing community of inventors

Tokyo, Japan

Hideo Morishita