Shin-Etsu Handotai Co., Ltd.

Shin-Etsu Polymer Co., Ltd.

Tohoku University

Fujikoshi Machinery Corp.

Hideo Kudo

Hisashi Masumura

Tadahiro Kato

Isao Uchiyama

Kiyoshi Suzuki

Masami Nakano

Masahiko Yoshida

Teruaki Fukami

Seiichi Miyazaki

Takashi Nihonmatsu

Koji Kitagawa

Junichi Ueno

Syuichi Kobayashi

Sadayuki Okuni

Morie Suzuki

Takashi Tanakajima

Yoshiharu Kimura

Takashi Matsuo

Tadahiro Ohmi

Hiroshi Tomioka

Akinobu Teramoto

Fumihiko Hasegawa

Rihito Kuroda

Hiroshi Oishi

Toshitsugu Yajima

Yoshinori Hayamizu

Kazuya Sato

Tsutomu Suzuki

Hiroki Yamagishi

Tadakazu Miyashita

Atsushi Kajikura

Masato Hosoi

Shingo Sumie

Yoshinobu Nishimoto

Masayuki Yamada

Makoto Tsukada

Tomoyuki Suwa

Hidetoshi Tsunaki

Noritaka Morioka

Toshio Ajito

Sunao Shima

Yuji Hirao

Tsuyoshi Matsuzaki

Sadayuki Ohkuni

Makoto Takaoka

Atsuto Sakata

Chiho Seki

Daisuke Kobayashi

The invention is directed to a method for slicing an ingot in the form of a wafer by winding a wire around a plurality of grooved rollers and pressing the wire against the ingot while making the wire travel and supplying slicing slurry to the grooved rollers, in which when the ingot is sliced, an amount of displacement of the ingot changing in an axial direction is measured and an amount of axial displacement of the grooved rollers is controlled so as to correspond to the measured amount of axial displacement of the ingot, and thereby, the ingot is sliced while controlling a relative position of the wire relative to an entire length of the ingot changing in the axial direction. As a result, a slicing method and a wire saw apparatus are provided that can perform slicing in such a way that a Bow or a Warp in a wafer obtained by slicing can be reduced, for example, by controlling a slicing path built into an ingot so that, in particular, the slicing path becomes flattened.

Slicing method and wire saw apparatus

On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

Semiconductor substrate and semiconductor device

Provided is a polishing apparatus comprising a lower stool (), a motor () and a speed reducer () for driving the lower stool, and a box () for covering at least the portion of the lower stool below the working action face. The polishing apparatus polishes a wafer by forcing the wafer to contact the lower stool and by rotating the lower stool. The box has its inside separated by partitions (and) into a plurality of regions, and the motor for driving the lower stool is arranged in a region other than the region containing the lower stool. The polishing apparatus can manufacture a wafer of a stable shape, irrespective of the time elapsed from the running start and the presence/absence of the stop of the polishing apparatus.

Polishing apparatus

A multicolor molding article is integrally formed of first and second molding materials in combination. At least part of the peripheral portion in the boundary between a first molding part of the first molding material and a second molding part of the second molding material is formed with a thin projected piece. The tapering inclined angle of the thin projected piece is specified to range from 5&#xb0; to 40&#xb0;.

Multi-color molding article, multicolor molding method and substrate storage container

A carrier for a double-side polishing apparatus, including at least: a carrier base placed between upper and lower turn tables, the carrier base having a holding hole therein, the holding hole holds the wafer sandwiched between the upper and lower turn tables. A ring-shaped resin ring disposed along an inner circumference of the holding hole, the resin ring protecting a chamfered portion by making contact with the chamfered portion of the held wafer, wherein the resin ring has a concave groove on an inner circumference thereof, upper and lower tapered surfaces are formed in the concave groove. A double-side polishing apparatus using the carrier and a double-side polishing method that can reduce the generation of taper in a polished surface and improve the flatness while suppressing the generation of an outer peripheral sag of the wafer.

Carrier for double-side polishing apparatus, double-side polishing apparatus using the same, and double-side polishing method

A presser member () of the present invention is formed of different materials for the contacting part () to press-hold the precision substrates () and for the parts other than the contacting part (). The presser member () is shaped from a thermoplastic elastomer for a rectangular frame part, and the contacting part () has a pair of structuring parts () provided in such a fashion as to inwardly extend from each of a pair of oppositely facing sides. A second contacting part () is formed in the extension peripheral part extending via a supporting part (). The other parts are shaped from a thermoplastic resin. The aforementioned contacting part () is provided with grooves of a V-shaped cross section with inclinations changed in the middle for receiving the peripheries of precision substrates (), and V-grooves for press-holding the peripheries of precision substrates are provided in resilient pieces () separated and protruding in a comb teeth-like fashion to form the second contacting part ().

Precision substrate storage container and retaining member therefor

Provided are a gasket member for a substrate-holding container which is little liable to contamination of the substrate materials contained with organic matters due to the low content of organic matters to be emitted as a gas still without decreasing the operability in opening and closing of the covering as well as a substrate-holding container by using the same. The gasket member for a substrate-holding container provided is formed from a thermoplastic polyester-based elastomer resin containing absolutely no softening agent and having a surface hardness not exceeding 80A by the hardness testing method specified in JIS K6301, of which the amount of gas emission as determined under heating conditions for 60 minutes at 80&#xb0; C. does not exceed 10 ppm based on the weight of the material. Disclosure is given of a polyester-based block copolymer suitable as a molding material of the said gasket member.

Gaskets for substrate containers

A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

Semiconductor wafer processing method and semiconductor wafers produced by the same

A polishing method for wafer, comprises the steps of; adhering a wafer to a wafer adhesion part of a holding plate through a wax, and rubbing the wafer with a polishing pad, wherein grooves are formed on the wafer adhesion part and extend to the outside of the wafer adhesion part.

Polishing method for wafer and holding plate

Semiconductor wafers processing method and semiconductor wafers produced by the same

A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.

Method of purifying alkaline solution and method of etching

In a surface-grinding method for a workpiece, for example a semiconductor wafer, it is possible to correct or improve waviness and bow and to obtain a semiconductor wafer having no thickness dispersion. Besides, wafer processing to higher precision than that conventionally attained is achieved and at the same time simplification of the processing method and thereby reduction of the cost are also achieved. In the present invention, while the workpiece is fixed for supporting at one surface by the fixedly supporting means of a surface-grinding apparatus, the other surface of the workpiece is surface-ground, where the workpiece adheres on the upper surface of a base plate by the aid of adhesive material and the base plate is fixedly supported by the lower surface of itself on the fixedly supporting means.

Method and apparatus for surface-grinding of workpiece

A surface grinding method for a thin-plate workpiece is provided including the steps of (a) roughly surface grinding a first surface of a thin-plate workpiece using a thin-plate workpiece surface grinding device to create a reference plane having no sori or waviness; (b) inverting the thin-plate workpiece, the first surface of which has been roughly surface ground and, with a surface grinding device having a hard chucking plate, chucking the first surface to the hard chucking plate to roughly surface grind a second surface of the thin-plate workpiece; (c) chucking to the hard chucking plate the first surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to further finely surface grind the second surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the second surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to further finely surface grind the first surface of the thin-plate workpiece, wherein the surface grinding device comprising a surface grinding element; and a holding element for holding the thin-plate workpiece to be surface ground, wherein the holding element is a soft holding element. An alternate surface grinding method for a thin-plate workpiece is also provided in which steps (a) and (b) are the same as above and in which steps (c) and (d) are as follows: (c) chucking to the hard chucking plate the second surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to finely surface grind the first surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the first surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to finely surface grind the second surface of the thin-plate workpiece.

Surface grinding device and method of surface grinding a thin-plate

A method of polishing semiconductor wafers includes a double side primary polishing step and a single side secondary polishing step using a single side polishing machine with a wafer holder including a template so bonded on a carrier plate as having one or more wafer receiving holes in which backing pads are disposed respectively for holding the back sides of the respective wafers fittingly received therein. This method makes it to possible to hold a plurality of wafers at one time due to batch processing to thereby improve the productivity, and decrease extremely the generation of the defective dimples in the front side of the wafer. Compared with conventional single side polishing, the flatness level of the wafer polished with the double side polishing machine in this method is improved.

Method of polishing semiconductor wafers

Growing community of inventors

Nishishirakawa, Japan

Hideo Kudo