Kabushiki Kaisha Toshiba

Nec Corporation

Nippon Electric Co., Ltd.

Hideo Kawano

Makoto Shibusawa

Akira Kubo

Tetsuya Iizuka

Kazushige Mori

Masayuki Dohjo

Tamio Nakai

Tatsuya Suzuki

Seiichi Shishiguchi

Masao Mikami

Keiji Shiotani

Masayasu Ueno

Takaaki Kamimura

Yoshishige Matsumoto

Isamu Sakuma

Katsuhiko Nishida

Toyoki Higuchi

Takao Furuse

Motoyuki Kitabata

In matrix array substrate for flat-panel display devices or the like in which a repair circuit for connecting a defected pixel electrode and next electrode in a tandem is disposed between the two pixel electrodes, a contact hole for connecting one of connector electrodes of the repair circuit to one of the pixel electrodes is disposed within contours of a scanning line. Meanwhile, in a matrix array substrate for normally white mode flat-panel display devices, an island metal pattern is disposed within the contours of a scanning line and within a storage-capacity-forming portion extended from one of the two electrodes. The island metal pattern is formed simultaneously with signal line and has a scanning-line-wise size larger than width of the scanning line.

Matrix array substrate

A control device of an IPS-mode or other mode liquid crystal display device for increasing response speed without diminishing elastic torque of the liquid crystal. Image signals are supplied in such a manner that one display pattern is displayed in first and second, two consecutive frames. When to increase voltage of the image signal for changing luminance, voltage at the first frame being set higher than a voltage value of gradation scale corresponding to a given luminance; and voltage at the second frame being set to a voltage value of gradation scale corresponding to the given luminance. Meanwhile, when to decrease voltage of the image signal for changing luminance, voltage at the first frame being set lower than a voltage value of gradation scale corresponding to a given luminance; and voltage at the second frame being set to a voltage value of gradation scale corresponding to the given luminance.

Control device of a liquid crystal display device

A step portion is formed in an insulating layer provided between two opposing electrode layers outside a pixel electrode formation region, so that a projection portions are formed on the two electrode layers, wherein the shape of the projection portions of the electrode layers is of an electric-field concentration type to induce discharging between the opposing portions of the layers via the insulating layer.

Electrode wiring board subjected to counter measure against static electricity and display device using the same

A number of pixel regions surrounded by scanning signal lines and display signal lines are defined on an array substrate of a liquid crystal display element. Formed in each pixel region are a display pixel electrode extending in parallel with the display signal lines and two opposite electrodes provided on both sides of the display pixel electrode and extending in parallel with the display pixel electrode. Each of the two opposite electrodes is provided at a predetermined interval from the display pixel electrode. An end of the display pixel electrode is layered over an opposite signal line, thereby constituting a first supplemental capacity, and another end thereof is electrically connected to a switching element. An end of each opposite electrode is electrically connected to an opposite signal line. The display pixel electrode and the opposite electrodes are formed by processing the same conductive layer as that forming the display signal lines.

Array substrate for liquid crystal display element

An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127). With such an arrangement, an appropriate storage capacitor can be formed by causing the scanning lines and pixel electrode to overlap each other without having to decrease the manufacturing yield while enabling achievement of high aperture ratio.

Array substrate comprising semiconductor contact layers having same

Array substrate for display device and manufacturing method thereof

Array substrate for displaying device with capacitor lines having

In a method for forming a capacitor, after preparing a substrate having at least one device area thereon, an amorphous silicon film containing one type of dopant is formed on the device area. A mask layer comprising mask islands is formed and distributed on a surface of the amorphous silicon film. The surface of the amorphous silicon is dry-etched by using the mask layer as a selective etching mask to produce a jagged surface having a lot of protrusions. After forming the jagged surface, the amorphous silicon film is changed into a polycrystalline silicon film serving as a storage electrode. Finally, a dielectric film and then another storage electrode are formed sequentially on the jagged surface of the storage electrode.

Method for forming capacitor electrode having jagged surface

Array substrate with bus lines takeout/terminal sections having multiple

Projections are formed of a layer at locations at which no conductive pattern such as a signal line formed of another layer is provided, a scanning line and an storage capacitor line can be prevented from being short-circuited via the portion of an insulating film damaged by discharge of static electricity.

LCD with electrostatic discharge projections

In a liquid crystal display device according to the invention, one of electrodes holding a liquid crystal composition therebetween is formed by a shading conductor having light-transmitting holes or slits. The display device of the invention can reduce a required amount of indium (In), a rare metal, and can have a high light transmittance.

Electrode structure of liquid crystal display device and method of

A gain-guided type AlGaInP visible light laser diode in accordance with the present invention has a characteristic in that, an n-type current-blocking layer for the current constriction in the double-heterojunction structure in highly doped with n-type impurity so as to prevent the formation of p-type inversion layer therein. When an n-GaAs current-blocking layer is formed on a p-GaInP etching stopper layer doped with zinc, the n-type impurity concentration of the n-GaAs current blocking layer is selected to be 3.times.10.sup.18 cm.sup.-3 or more to achieve a large kink-light output at a low oscillation threshold current.

Gain-guided type laser diode

First, a metal layer is deposited on a silicon film surface to form a silicide layer in an interface between the silicon film and the metal layer. Subsequently, the metal layer is all removed by etching such that silicide islands are left on the surface of the silicon film, and then the exposed silicon film surface is dry-etched by using the silicide islands as a selective mask.

Method of forming silicon film having jagged surface

A transverse mode stabilized AlGaInP visible light laser diode in accordance with the present invention has a characteristic in that, instead of forming a built-in refractive index distribution in an active layer along a junction plane by means of the absorption loss of the oscillated light in the conventional transverse mode stabilized AlGaInP laser diodes, an optical guide layer having a ridge stripe portion is formed on the active layer, and a refractive index distribution is formed by the thickness difference of the optical guide layer. In particular, the present laser diode employs as the current blocking layer to be formed on the sides of the mesa, an Al.sub.x Ga.sub.1-x As layer which does not give rise to an absorption loss of the oscillated light.

Transverse-mode stabilized laser diode

A semiconductor laser of the rib guide type having the thickness of an active layer within a stripe-shaped region thicker than that of the outside, and thus the stripe-shaped region is made to have a waveguide action and, thereby, fundamental mode laser may be achieved.

Growing community of inventors

Tokyo, Japan

Hideo Kawano