Renesas Electronics Corporation

Renesas Electronics America Inc.

Sun Chemical Corporation

Yuugenkaisha Ohnobankinkougyousho

Hideo Ishii

Ryotaro Kudo

Tetsuo Sato

Tsuyoshi Ota

Fumio Tonomura

Nobuyoshi Matsuura

Noboru Akiyama

Takayuki Hashimoto

Koji Tateno

Takashi Hirao

Nobuo Harui

Kenichi Nakano

Tomoaki Uno

Yoshinao Miura

Kazuyuki Umezu

Shin Chiba

Koji Saikusa

Nobuo Hashimoto

Takahiro Nomiyama

Matsuura Nobuyoshi

Kenji Ohno

Kenji Tanahashi

Kiichi Ohno

A step down convertor with a distributed driving system. In one embodiment, an apparatus is disclosed that includes an inductor coupled to an output node. The apparatus also includes first and second circuits. The first circuit can transmit current to the output node via the inductor, and the second can transmit current to the output node via the inductor. The apparatus also includes a third circuit for modifying operational aspects of the first circuit or the second circuit based on a magnitude of current flowing through the inductor.

Distributed driving system

A cell protection system includes a charge control MOSFET, a charge current detection MOSFET, a discharge control MOSFET, a discharge current detection MOSFET, a charge current detection resistance, a discharge current detection resistance and a control circuit. The charge current detection MOSFET has a drain and a gate common with the charge control MOSFET. The discharge control MOSFET has a drain common with the charge control MOSFET. The discharge current MOSFET has a drain and a gate common with discharge control MOSFET. The charge current detection resistances and the discharge current detection resistance are provided in correspondence to the charge current detection MOSFET and the discharge current detection MOSFET, respectively. The control circuit generates a gate control signal for the charge control MOSFET and the charge current detection MOSFET by using the charge current detection resistance and generates a gate control signal for the charge control MOSFET and the discharge current detection MOSFET by using the discharge current detection resistance.

Cell protection system

A cell protection system includes a charge control MOSFET, a charge current detection MOSFET, a discharge control MOSFET, a discharge current detection MOSFET, a charge current detection resistance, a discharge current detection resistance and a control circuit. The charge current detection MOSFET has a drain and a gate common with the charge control MOSFET. The discharge control MOSFET has a drain common with the charge control MOSFET. The discharge current detection MOSFET has a drain and a gate common with the discharge control MOSFET. The resistancesare provided in correspondence to the charge and discharge current detection MOSFETs. The control circuit generates a gate control signal for the charge control and current detection MOSFETs by using one of the resistances and generates a gate control signal for the discharge control and current detection MOSFETsby using another one of the resistances.

Disclosed is a power conversion circuit that suppresses the flow of a through current to a switching element based on a normally-on transistor. The power conversion circuit includes a high-side transistor and a low-side transistor, which are series-coupled to each other to form a half-bridge circuit, and two drive circuits, which complementarily drive the gate of the high-side transistor and of the low-side transistor. The high-side transistor is a normally-off transistor. The low-side transistor is a normally-on transistor.

Power conversion circuit, multiphase voltage regulator, and power conversion method

A first MOSFET is formed in a first region of a chip, and a second MOSFET is formed in a second region thereof. A first source terminal and a first gate terminal are formed in the first region. In the second region, a second source terminal and a second gate terminal are arranged so as to be aligned substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned. A temperature detection diode is arranged between the first source terminal and the second source terminal. A first terminal and a second terminal of the temperature detection diode are aligned in a first direction substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned or in a second direction substantially perpendicular thereto.

Semiconductor device and method of manufacturing the same

The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m&#xd7;parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

Semiconductor device, LED driving circuit, and apparatus for displaying an image

Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.

Power supply device

A method can include obtaining a voltage across a first transistor as an obtained voltage. The method can also include multiplying the obtained voltage by a predetermined multiple M to yield a multiplied voltage. The method can further include applying the multiplied voltage to a second transistor, wherein the second transistor is N times smaller than the first transistor. The method can additionally include providing an output current of the second transistor as an M/N scaled estimate of an output current of the first transistor.

Current sensing and measuring method and apparatus

A printing ink is disclosed containing: an emulsion stabilizer having a water tolerance value of between more than about 1.0 and equal or less than about 11.0 and water as a dispersed phase, wherein said emulsion stabilizer stabilizes the water to form a stabilized emulsion printing ink.

Stable offset emulsion inks containing water tolerant emulsion stabilizer

An emulsion stabilizer is disclosed having a water tolerance value of between more than about 1.0 and equal or less than about 11.0.

Water tolerant emulsion stabilizers

Diclosed are a fluid mixing element in which at least one helical shaft provided with at least one helical groove on an outer peripheral wall thereof throughtout its length is inserted in a cylindrical passage tube provided with at least one helical groove on an inner peripheral wall thereof throughout its length. According to the mixing element of the present invention, the fluid supplied into the mixing element flows partly along the helical groove formed in the passage tube and partly along the helical groove formed on the helical shaft to produce the turbulent mixing of the fluid in the mixing element. When the fluid flows through the helical grooves formed in the passage tube and on the helical shaft of the mixing element, the phase transfer is also carried out at planes perpendicular to the flow direction by inertia of the fluid. Accordingly, the fluid in contact with the helical grooves and the fluid out of contact therewith are replaced with each other in series. The mixing is further effected by division of the fluid in series at each of many contact portions of the passage tube and the helical shaft. As a result, the fluid mixing efficiency can be improved. The number of the mixing elements is therefore reduciable, when the plural mixing elements are connected to each other to form the mixer, and in addition, the time required for mixing in the mixer is also reducible.

Growing community of inventors

Takasaki, Japan

Hideo Ishii