Other

Hitachi, Ltd.

Hitachi Engineering Co., Ltd.

Hitachi Microcomputer Engineering, Ltd.

Hideo Hara

Yoji Nishio

Tatsumi Yamauchi

Hiromichi Yamada

Fumio Murabayashi

Katsunori Koike

Kosaku Hirose

Kayoko Nemoto

Hiroshi Goto

Yoshimune Hagiwara

Katsuaki Takagi

Yuzo Kita

Kazuyoshi Ogawa

Tadao Sekiguchi

Toshiharu Arai

A semiconductor integrated circuit device, responsive to an input signal having a low amplitude and short transition time, operates with low power consumption and prevents the flow of breakthrough current. In an example circuit thereof, the input signal is transmitted through an NMOS pass transistor to the gate of a first NMOS transistor and is applied, through a second NMOS transistor, to the gate of a first PMOS transistor, the first PMOS transistor performing complementary operation with the first NMOS transistor through the second NMOS transistor; the gate of the first PMOS transistor is connected to the power supply potential through the second PMOS transistor; the gate of the second NMOS transistor is connected to the power supply potential; and the gate of the second PMOS transistor is controlled by the signal at a common drain connection of the first NMOS and first PMOS transistors.

Gate circuit and semiconductor circuit to process low amplitude signals, memory, processor and information processing system manufactured by use of them

The object of the present invention to provide a semiconductor integrated circuit device wherein the input signal is made to have a low amplitude to shorten transition time of the input signal, said integrated circuit device operating at a low power consumption, without flowing of breakthrough current, despite entry of the input signal featuring low-amplitude operations, and said integrated circuit device comprising a gate circuit, memory and processor. When input signal is supplied through the NMOS pass transistor, said input signal is input to the gate of the first NMOS transistor, and at the same time, is input into the gate of the first PMOS transistor which performs complementary operation with said first NMOS transistor through the second NMOS transistor; said first PMOS gate is connected to the power supply potential through the second PMOS transistor, and the gate of the said second NMOS transistor is connected to the power supply potential; wherein the gate of the said second PMOS transistor gate is controlled by the signal which is connected with both the drain of the said first NMOS transistor and the drain of the said first PMOS transistor.

The object of the present invention is to provide a semiconductor integrated circuit device wherein the input signal is made to have a low amplitude to shorten transition time of the input signal, said integrated circuit device operating at a low power consumption, without flowing of breakthrough current, despite entry of the input signal featuring low-amplitude operations, and said integrated circuit device comprising a gate circuit, memory and processor. When input signal is supplied through the NMOS pass transistor, said input signal is input to the gate of the first NMOS transistor, and at the same time, is input into the gate of the first PMOS transistor which performs complementary operation with said first NMOS transistor through the second NMOS transistor; said first PMOS gate is connected to the power supply potential through the second PMOS transistor, and the gate of the said second NMOS transistor is connected to the power supply potential; wherein the gate of the said second PMOS transistor gate is controlled by the signal which is connected with both the drain of the said first NMOS transistor and the drain of the said first PMOS transistor.

Gate circuit and semiconductor circuit to process low amplitude signals,

A pulse width modulation circuit which can cancel the mean error of pulse width modulation with respect to time due to the offset voltage of a triangular wave signal and to the offset voltage of a comparator, by adding simple circuits to an existing pulse width modulation circuit. The invention relates also to an integration circuit of the product of two analog signals using the pulse width modulation circuit described above. The principle of the present invention combines a circuit for cancelling the offset of a triangular wave signal by inverting either the triangular wave signal with respect to an input signal or the input signal with respect to the triangular wave signal, in every predetermined period, with a circuit for eliminating the offset of a comparator by inverting the output of the comparator and replacing the input terminals of the comparator if the input signal is not inverted, or connecting the input terminal of the comparator as such if the input signal is inverted.

Pulse width modulation circuit and integration circuit of analog product

A gas shielding method for a fuel exchange pool in which, in order to shield radioactive gas generated in said fuel exchange pool by forming a gas curtain flowing in one direction above the fuel pool, both a ratio between a blown-out quantity and a sucked quantity of the gas flow and a temperature difference between the gas and the water in the fuel pool are suitably selected.

Gas shielding method for a fuel exchange pool and an apparatus therefor

Growing community of inventors

Akigawa, Japan

Hideo Hara