Rohm Co., Ltd.

Hideo Hara

Yuji Ishimatsu

Kenji Hama

Takashi Naiki

Hiroaki Goda

Kazuhiro Murakami

Yoshio Higashida

Yohei Akamatsu

Takumi Katoh

Naohiro Imakake

A semiconductor device includes a substrate, a conductive part formed on a front surface of the substrate, a semiconductor chip disposed on the front surface of the substrate, a control unit that controls the semiconductor chip, a sealing resin that covers the semiconductor chip, the control unit and the conductive part, and a first lead bonded to the conductive part and partially exposed from the sealing resin. The conductive part includes a first pad and a second pad disposed apart from each other. The first lead is bonded to the first pad and the second pad.

Semiconductor device

A semiconductor device includes a substrate, a conductive portion, a sealing resin, a plurality of semiconductor chips, and a plurality of temperature detection elements. The substrate has a substrate obverse surface and a substrate reverse surface that face opposite sides in a thickness direction. The conductive portion is formed on the substrate obverse surface. The sealing resin covers at least a part of the substrate. The sealing resin also covers the entire conductive portion. The plurality of semiconductor chips are disposed on the substrate obverse surface. The plurality of temperature detection elements are disposed on the substrate obverse surface. The number of temperature detection elements is equal to or greater than the number of semiconductor chips.

A semiconductor device includes a substrate, a conductive section, a sealing resin, and a conductive section wire. The substrate includes a substrate obverse face and a substrate reverse face oriented in opposite directions to each other in a thickness direction. The conductive section is formed of a conductive material and located on the substrate obverse face. The conductive section includes a first section and a second section spaced apart from each other. The sealing resin covers at least a part of the substrate and an entirety of the conductive section. The conductive section wire is conductively bonded to the first section and the second section of the conductive section.

A semiconductor module includes a first terminal configured to be fed with a first potential, a second terminal, a third terminal configured to be fed with a second potential lower than the first potential, a first switch connected between the first and second terminals, a second switch connected between the second and third terminals, a first driver configured to turn on and off the first switch, and a second driver configured to turn on and off the second switch. The first driver is configured to set, based on a voltage fed to the second terminal, an inhibition period in which the first switch is inhibited from being turned on.

Semiconductor module

A semiconductor device includes high-side and low-side switching elements connected in series to form a switching arm, a high-side driver IC for driving the high-side switching element, and, on a chip separate from the high-side switching element, a low-side driver IC for driving the low-side switching element. The driver IC includes a first controller for monitoring a switching voltage appearing at the node where the high-side and low-side switching elements are connected together. When a first driving control signal fed in from outside the semiconductor device instructs to turn on the high-side switching element, the first controller determines whether or not to permit the high-side switching element to be turned on based on a result of checking the switching voltage.

An electronic device includes a first electronic component including a first main body, a second electronic component including a second main body, a mounting substrate having a mounting surface, and a heat dissipator having an attaching surface. The mounting surface and the attaching surface face each other in the z direction. The first main body and the second main body are disposed between the mounting substrate and the heat dissipator in the z direction and arranged side by side in the x direction. The first main body has a first front surface facing the attaching surface and a first back surface facing the mounting surface. The second main body has a second front surface facing the attaching surface and a second back surface facing the mounting surface. The dimension of the second main body in the z direction is smaller than the dimension of the first main body in the z direction. The first front surface and the second front surface overlap with each other as viewed in the x direction. A gap is provided between the second back surface and the mounting surface.

Electronic device

A direct-current voltage is applied to a series circuit composed of a switching transistor, a sense resistor, and a coil. A control circuit is configured to be capable of performing current control in which the control circuit, after turning on the switching transistor, determines a turn-off time point of the switching transistor based on a sense voltage appearing across the sense resistor, and to turn off the switching transistor during the current control if, despite a predetermined time having passed after the switching transistor being turned on, the sense voltage does not reach a predetermined threshold voltage.

Switching control device, driving device, isolated DC-DC converter, AC-DC converter, power adapter, and electric appliance

There is provided an insulated DC/DC converter configured to generate a secondary voltage on a secondary side of a power transformer from a primary voltage on a primary side of the power transformer by switching a switching element connected to a primary winding of the power transformer while insulating the primary side and the secondary side of the power transformer from each other, including: a communication transformer; a secondary control circuit including a PWM controller configured to generate a PWM signal of a constant PWM frequency based on the secondary voltage in a circuit arranged on the secondary side; and a primary control circuit configured to switch the switching element at the PWM frequency based on information of the PWM signal transmitted from the secondary control circuit via the communication transformer in a circuit arranged on the primary side.

Insulated DC/DC converter, AC/DC converter, power adapter, and electric device

In an isolated DC-DC converter, in response to a switching transistor connected to the primary winding of a transformer turning off, a turn-on control circuit turns on a synchronous rectification transistor on the secondary side. A turn-off control circuit determines the turn-off time point of the synchronous rectification transistor by charging a capacitor with a current commensurate with the magnitude of an induced voltage appearing in the secondary wiring of the transformer during the on-period of the switching transistor and, after the synchronous rectification transistor turns on, discharging the capacitor with a current commensurate with the output voltage of the DC-DC converter.

Synchronous rectification controlling device, isolated synchronous-rectification DC-DC converter, gate driving device, isolated DC-DC converter, AC-DC converter, power adapter, and electric appliance

Growing community of inventors

Kyoto, Japan

Hideo Hara