Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kobelco Research Institute, Inc.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Hideo Fujii

Junichi Nakai

Katsutoshi Takagi

Yuuki Tauchi

Takashi Onishi

Yuki Tauchi

Hitoshi Matsuzaki

Kenichi Inoue

Takeshi Ohwaki

Takayuki Tsubota

Toshiki Sato

Tetsuya Ogawa

Katsura Kajihara

Hiroyuki Mitani

Takehiro Tsuchida

Tetsuya Yoshikawa

Jun Munemasa

Tatsuya Yasunaga

Norihiro Jiko

Chikara Ichihara

Hironori Kakiuchi

Shingo Kasai

Provided is a so-called Lundell-type generator capable of avoiding generation of eddy current in rotor iron-cores without complicated structure. The generator includes a stator, a rotary shaft, first and second rotor iron-cores, and a rotor coil. Each rotor iron-core includes a base and rotor magnetic-pole portions extending axially from the base, the rotor coil disposed on the inside thereof. Each rotor iron-core is formed of a plurality of unit plates stacked axially. The unit plates integrally include respective basal plate portions stacked to form the bases and a plurality of magnetic-pole plate portions stacked to form the rotor magnetic-pole plate portions stacked to form the rotor magnetic-pole portions.

Generator

A bus bar () comprises: a laminated conductive wire () formed by arranging side by side in the longitudinal direction a first plate-shaped conductive wire () formed by spirally winding stripe conductors () mutually adjacent in the width direction while bringing the opposing inner surfaces closer to each other, and a second plate-shaped conductive wire () formed by spirally winding the stripe conductors () in the direction opposite the direction of the first conductive wire () while bringing the opposing inner surfaces closer to each other, and overlapping these wires () so that the outer surfaces in the width direction face each other; and terminals () joined to the first conductive wire () and the second conductive wire () at both ends of the laminated conductive wire ().

Bus bar, bus bar module, and method of manufacturing bus bar

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values Aand Busing the formula below, and selecting larger one of the values Aand Bas the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

AG base sputtering target and process for producing the same

A silver alloy reflective film for optical information storage media, which can maintain superior environmental resistance, such as high hygrothermal resistance and high light stability, over the long term even when the metal reflective film is in direct contact with a resin layer. An optical information storage medium includes the reflective film and a sputtering target deposits the reflective film. The silver alloy reflective film includes one or more specific elements selected from Pr, Ho, Yb, Sm, Er, Tm, and Tb, to suppress deterioration occurring when the silver alloy reflective film is in direct contact with a resin layer, where silver in the reflective film migrates and aggregates into the adjacent resin layer.

Silver alloy reflective film for optical information storage media, optical information storage medium, and sputtering target for the deposition of silver alloy reflective film for optical information storage media

An optical recording medium of a pitting recording type, to which recording marks are formed by irradiation with a violet laser beam having a wavelength &#x3bb; in the range of about 380 to about 450 nm, includes a substrate having a surface provided with guide grooves and lands, and a metal recording layer in which recording marks are formed by irradiation with a laser beam. The guide grooves and the lands meet conditions expressed by:&#x3bb;/18&#x2266;D&#x2266;&#x3bb;/11&#x2003;&#x2003;(1)1.5&#x2266;W/W&#x2266;3.5&#x2003;&#x2003;(2)Where &#x3bb; is the wavelength of the laser beam used for writing and reading, D, is the depth of the grooves, Wis the width of the grooves, and Wis the width of lands formed on the substrate, and the wavelength &#x3bb; is in the range of 380 to 450 nm.

Optical recording medium

An Ag alloy reflective layer for optical information recording medium having excellent environmental resistance, an optical information recording medium having such Ag alloy reflective layer, and the like are provided. This Ag alloy reflective layer for an optical information includes 0.1 to 5 atomic % in total of at least one element selected from W, Ti, V, Mn, Zr, Cr, and Ni; 0.005 to 1 atomic % of Bi; and the residue of Ag and inevitable impurities. As a consequence, this Ag alloy reflective layer has improved environmental resistance including the light resistance for the light beam of particular wavelength and resistance to moist heat under particular set of conditions.

Ag alloy reflective layer for optical information recording medium, optical information recording medium, and sputtering target for forming Ag alloy reflective layer for optical information recording medium

The sputtering target made of a Ag&#x2014;Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I/I+I+I+I)]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

Ag-Bi-base alloy sputtering target, and method for producing the same

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

Ag base sputtering target and process for producing the same

A silver alloy reflective film is used in an optical information recording medium and contains Ag as a main component, a total of 1 to 10 atomic percent of at least one selected from Nd, Gd, Y, Sm, La, and Ce, and a total of 2 to 10 atomic percent of at least one selected from Li, Mg, Al, Zn, Cu, Pt, Au, Pd, Ru, and Rh. The reflective film preferably further contains 0.01 to 3 atomic percent of at least one of Bi and Sb and/or 2 to 10 atomic percent of at least one selected from In, Sn, and Pb. An optical information recording medium includes the silver alloy reflective film. A silver alloy sputtering target has the same composition as the silver alloy reflective film.

Silver alloy reflective films for optical information recording media, silver alloy sputtering targets therefor, and optical information recording media

A silver alloy reflective film is used in an optical information recording medium and contains silver as a main component, a total of 1 to 10 atomic percent of at least one rare-earth element, and a total of 1 to 15 atomic percent of at least one selected from In, Sn, Al, and Mg, in which the total content of the at least one rare-earth element and the at least one selected from In, Sn, Al, and Mg is 5 atomic percent or more. The silver alloy reflective film preferably further contains 0.01 to 3 atomic percent of at least one of Bi and Sb. A silver alloy sputtering target has the same composition as the silver alloy reflective film.

A silver alloy reflective film contains X1 as a component and has an enriched layer located in a region within 2 nm deep from the surface of the reflective film, in which the component X1 is enriched in the enriched layer at a higher concentration than the average concentration of X1 in the whole of the reflective film, wherein X1 is at least one alloying element selected from the group consisting of Bi, Si, Ge, Pb, Zn, Cd, Hg, Al, Ga, In, Tl, Sn, As, and Sb. The reflective film has stable and excellent basic properties as reflective films, such as initial reflectivity and durability, and satisfies further requirements, such as laser marking suitability. An optical information recording medium includes the reflective film and is excellent.

Optical information recording media and silver alloy reflective films for the same

Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of &#x2212;20&#xb0; C. to 0&#xb0; C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.

Method for fabricating copper-based interconnections for semiconductor device

A reflective film used as a reflective electrode or a reflector, comprising an Ag-based alloy containing rare earth metals. The reflective film has high reflectivity and high durability.

Reflective film, reflection type liquid crystal display, and sputtering target for forming the reflective film

A novel reflective layer or semi-transparent reflective layer for use in optical information recording media with suppressed growth of Ag crystal grains and having a high reflectivity and excellent structural stability comprising an Ag based alloy containing from 0.1 to 3.0% of Nd in total of at least one element selected from the group consisting of Nd, Sn and Ge; and/or containing 0.1% or more of at least one rare earth element.

REFLECTION LAYER OR SEMI-TRANSPARENT REFLECTION LAYER FOR USE IN OPTICAL INFORMATION RECORDING MEDIA, OPTICAL INFORMATION RECORDING MEDIA AND SPUTTERING TARGET FOR USE IN THE OPTICAL INFORMATION RECORDING MEDIA

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Kobe, Japan

Hideo Fujii