Hitachi, Ltd.

Opnext Japan, Inc.

Oclaro Japan, Inc.

Hitachi Metals, Ltd.

Lumentum Japan, Inc.

Hideo Arimoto

Masahiro Aoki

Hiroyasu Sasaki

Koichiro Adachi

Masataka Shirai

Kazunori Shinoda

Shigeki Makino

Takanori Suzuki

Yasunobu Matsuoka

Misuzu Sagawa

Kazuhiko Naoe

Noriko Sasada

Hiroaki Hayashi

Satoshi Tada

Makoto Takahashi

Hiroyuki Uchiyama

Yoshinori Sunaga

Akira Nakanishi

Noriyuki Sakuma

Yoshiaki Ishigami

Shinichi Saito

Yoshitaka Sasago

Toshiki Sugawara

Kazuhiro Ito

Norio Chujo

Daisuke Ryuzaki

Shinji Tsuji

Kinya Yamazaki

Kazuhiko Hosomi

Junji Shigeta

Kazuki Tani

Toshihiko Fukamachi

Jiro Yamamoto

Takashi Takahama

Kazuo Ishiyama

An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.

Optical device having a substrate and a laser unit that emits light into the substrate

In an optical modulatorof an embodiment, an optical waveguide coreis configured from an ntype semiconductor region, a gate insulating filmon the ntype semiconductor region, and a ptype semiconductor regionon the gate insulating film. Further, a width Wof the ntype semiconductor regionand a width Wof the ptype semiconductor regionare equally formed and are layered without being shifted. Therefore, an optical modulator having stable optical characteristics can be provided.

Optical modulator and method for manufacturing same

There is provided a photoelectric conversion module that can be mounted two-dimensionally over a device board in a high-density, low-height manner and cooled efficiently with an easy-to-install collective-type radiator. In the photoelectric conversion module mounted over the device board, an optical connector is attached to that surface of an optical subassembly facing the device board. An electric connector has at least two sides thereof opened so that the optical transmission medium is threaded therethrough and extended through at least two facing sides of the optical subassembly. The optical transmission medium is thus extended between the optical subassembly and the device board in a vertically stacked manner.

Photoelectric conversion module and transmission apparatus using the same

In an optical semiconductor device related to the present invention, a first light source outputting light having a first polarization, a second light source outputting light having a second polarization, a first optical modulator being optically connected to an output side of the first light source and modulating the light that is output from the first light source to output a light signal, a second optical modulator being optically connected to an output side of the second light source and modulating the light that is output from the second light source to output a light signal, and an optical multiplexer coupling the light signal that is output from the first optical modulator with the light signal that is output from the second optical modulator to output a coupled light signal, are integrated on a semiconductor substrate together.

Optical semiconductor modulator device and optical module

An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.

Optical device, modulator module, and method for manufacturing the optical device

A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction of the optical waveguide stripe.

Optical semiconductor device and optical waveguide

An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer portion. The first lower clad layer portion, the first core layer portion, and the first upper clad layer portion are disposed in this order from the substrate side. The optical device also includes a first etch stop layer configured to stop etching when the first optical waveguide is formed. The first etch stop layer being laminated over the substrate. The first optical waveguide is laminated on the first etch stop layer.

Optical device, optical module, and method for manufacturing optical device

A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.

Wavelength tunable filter and wavelength tunable laser module

A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided. A wavelength tunable laser module provided with a resonator including the wavelength tunable filter and a semiconductor light amplifier having a phase adjustment region and a light amplifying region, in which a wavelength margin between a peak transmission wavelength of a wavelength tunable filter and a mode hop occurring wavelength on a short wave side is smaller than that on a long wave side includes: a wavelength tunable laser module controller including an optical output sampling portion for detecting light intensity of light emitted from the resonator, a dither signal source for generating a dither signal for varying a phase adjustment signal to be applied to the phase adjustment region so that the detected light intensity becomes the maximum, and an FM signal source for generating an FM signal for oscillating the phase adjustment signal to be applied to the phase adjustment region with a period shorter than a variation period of the dither signal. The optical output sampling portion detects the light intensity in synchronization with oscillation of the phase adjustment signal by the FM signal.

Laser device and controlling method therefor

A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45&#xb0; mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45&#xb0; mirror at an angle of 90&#xb0; and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.

Semiconductor laser apparatus

There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface () and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.

Semiconductor device

Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a wavelength with the current supply and the voltage supply being turned off, and drives the voltage supply when the laser wavelength is to be shifted to a longer wavelength side from a wavelength with the current supply and the voltage supply being turned off.

Wavelength tunable laser apparatus and wavelength control method

A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor. Specific methods includes the following two methods, that is, a method of forming a tunneling junction structure in the compound semiconductor and another method of laterally forming a P-I-N junction to the compound semiconductor.

Semiconductor laser apparatus and optical amplifier apparatus

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Kodaira, Japan

Hideo Arimoto