Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Hideo Arima

Akira Ikegami

Hitoshi Yokono

Tokio Isogai

Takashi Inoue

Takanobu Noro

Nobuo Sato

Masayoshi Kaneyasu

Shoichi Iwanaga

Hiromi Tosaki

Naoya Kitamura

Mitsuko Ito

Kenji Takeda

Hitoshi Oka

Fusaji Shoji

Fumio Kataoka

Haruhiko Matsuyama

Hirayoshi Tanei

Hideyasu Murooka

Masayuki Kyooi

Teruo Mozume

Hideo Todokoro

Hiroyuki Ohta

Akio Hasebe

Ichiro Anjoh

Yutaka Nishimura

Naotaka Tanaka

Katsuhiro Kuroda

Sadayasu Ueno

Fumiyuki Kobayashi

Satoru Fukuhara

Masao Yano

Norio Saitou

Hidetaka Shigi

Kanemasa Sato

Hideho Yamamura

Takashi Kuroki

Kiyoshi Matsui

Yasuji Kamata

Seiichi Onoda

Genya Matsuoka

Yasumasa Koakutsu

Tamio Takeuchi

Mutsumi Horikoshi

Mituru Fujii

Ichiro Tsubokawa

Masao Sekihata

Mituko Ito

Kiyoshi Kawabata

Akira Ikagami

Electrode pads are formed on a tape circuit to correspond to positions of solder bumps on an IC. A plurality of pins formed on a periphery of the tape circuit provide electrical connection between the tape circuit and a mother socket. An elastomer sheet is provided between a portion of the tape circuit, on which the electrode pads are formed and the IC is mounted, and the mother socket, and a side surface of the sheet, which contacts with the tape circuit, is formed with cut grooves in lattice fashion such that respective centers of the electrode pads substantially coincide with intersections of the grooves. Thus portions defined by the grooves on the sheet are made independent from one another to enable accommodating pushing forces from the solder bumps, so that, even if dispersion in height generates between the solder bumps, the respective portions defined by the grooves are hardly influenced by one another, and so accommodate the pushing forces from the solder bumps to permit the solder bumps and the electrode pads to surely contact with each other.

Socket for testing of semiconductor device, and semiconductor device and method of manufacturing the semiconductor device

A thin film multilayer wiring board-producing method of the present invention is intended to decrease thermal stresses developing during the formation of the multilayer construction, and also to greatly reduce the number of the steps of the process, as compared with a conventional method. A film material can be used as an insulating film of the multilayer wiring board, and is adhesively bonded to a predetermined portion. Wiring conductors are formed by electroplating. The wiring layers are repeated laminated to form the multilayer construction. A metallic film serving as an electrode is formed on one of upper and lower surfaces of a substrate, the metallic film being removed after a multilayer wiring is formed. A soluble insulating film is formed on a metallic undercoat film on the substrate, and grooves are formed in the soluble insulating film, and wiring conductors are formed in the grooves, using either electroplating or both electroplating and electroless plating. Thereafter, the soluble insulating film and the metallic undercoat film are removed. Subsequently, an insoluble insulating film is formed at those locations from which the soluble insulating film and the metallic undercoat have been removed.

Method of producing a thin film multilayer wiring board

A process for the fabrication of an interconnected multilayer board involves the steps of forming a metallic under-conductive layer on a base substrate, forming a windowed resist layer on the metallic under-conductive layer, filling windows of the resist layer with a conductor by plating thereby forming a conductor layer, forming another windowed resist layer on the conductor layer and filling windows of this resist layer with a conductor by plating, thereby forming a via-hole layer and to provide a two-level structure of the conductor layer and the via-hole layer. Thereafter, the resist layers and portions of the metallic under-conductor layer other than those in contact with a lower face of the conductor constituting the conductor layer are dissolved to form a two-level skeleton structure of conductor lines and spaces within the skeleton structure are filled with a varnish in a solventless form and the varnish is cured.

Process for fabricating an interconnected multilayer board

A semiconductor package and an electronic circuit board in which the semiconductor package is mounted on an external circuit board. The semiconductor package has a substrate assembly and a semiconductor mounted on the substrate, where the substrate assembly is composed of a thick film circuit in the form of a ceramic circuit board and a pair of thin film circuits disposed one on each of opposite surfaces of the thick film circuits. Such a substrate assembly has one surface thereof connected to, i.e. electrically contacting, the semiconductor and an opposing surface thereof adapted to be connected to an external circuit. The thin film circuits of the assembly are formed of a heat-resisting resin and a conducting material.

Semiconductor package employing substrate assembly having a pair of thin

Described herein are interconnected mutilayer boards and their fabrication processes. Multilayer conductor lines of a skeleton structure are formed by conducting multilayer metallization while including all resist layers and metallic under-conductive layers and then removing the resist layers and metallic under-conductive layers at once. Spaces between the multilayer conductor lines of the skeleton structure are then filled with a solventless varnish so that insulating layers are formed. Modules making use of such interconnected multilayer boards and computers having such modules are also described.

Interconnected multilayer boards and fabrication processes thereof

A semiconductor chip carrier, an electronic module having the semiconductor chip carrier mounted therein, and an electronic device incorporating the electronic module. A semiconductor chip carrier comprises a multi-layer wiring substrate including a multi-layer ceramic board, and a thin film circuit mounted on said multi-layer ceramic board, and a semiconductor chip mounted and connected to the thin film circuit, wherein a low-resistance conductor path is provided on the surface of or in the multi-layer wiring substrate to connect between signal terminals which need to be connected with a low-resistance wire in the semiconductor chip, thereby realizing signal transmission at low resistance between the signal terminals of the semiconductor chip by this conductor path. This arrangement makes it possible to shorten the signal delay time of a semiconductor chip, and achieve higher speed signal processing in modules and electronic equipment in which a thus-improved semiconductor chip is used.

Semiconductor chip carrier, module having same chip carrier mounted

This invention provides a conductor paste having a low resistivity (about 10 .mu..OMEGA..cm or below) and capable of retaining a film thickness of 25 to 35 .mu.m after baking by composing the paste from 85 to 96 wt. % of a metal powder having a resistivity of 10 .mu..OMEGA..cm or below and 4 to 15 wt. % of an organic vehicle containing 5 to 13 wt. % of a binder. The invention also provides a process for producing the above-described conductor paste, in which 85 to 96 wt. % of a metal powder having a resistivity of 10 .mu..OMEGA..cm or below and 4 to 15 wt. % of an organic vehicle containing 5 to 13 wt. % of a binder are forcibly passed between the barrel-shaped rolls in a kneader and thereby kneaded to form a paste, wherein the roll interval in the kneader is adjusted so that the smallest distance between the adjoining barrel-shaped rolls becomes 5 .mu.m or less and the shear rate therebetween is set at 1,000 s.sup.-1 or more.

Conductor paste containing high amounts of either molybdenum or tungsten

A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.

Method and apparatus of fabricating electric circuit pattern on thick

An optical switch having a small number of optical connections includes a substrate in which are provided a first light path for conducting optical signals and a second light path consisting of a photosensitive element and light emitting element in pairs. An optical fiber cable is interrupted by the substrate, and optical signals in the fiber cable are transmitted through the first light path or intervened by an electrical system through the second light path in response to the switching movement of the substrate.

Optical switch

A gas detecting apparatus incorporates a number of gas detecting elements which react with a variety of gases and exhibit gas sensitivities differing from one another in dependence on the gas species. The detection patterns obtained by quantitizing the detection outputs of the gas detecting elements are compared with a plurality of standard patterns prepared previously for assumed combinations of gas species and concentrations thereof. On the basis of the standard pattern which is same or most similar to the detection pattern, the gas species is identified.

Gas detecting apparatus

Disclosed herein is a critical temperature sensitive resistor material which comprises 60 to 90% by weight of VO.sub.2 and 40 to 10% by weight of RuO.sub.2. This material exhibits hysteresis of resistance that decreases remarkably over a temperature range in which the resistance varies greatly, and is hence used for measuring the temperature maintaining a high precision.

Critical temperature sensitive resistor material

A thick film thermistor composition is prepared by mixing metal oxide powders of at least two of Mn, Co and Ni, and oxide powder of Ru as a noble metal, firing the resulting mixture, thereby obtaining a compound oxide thermistor of spinel structure, pulverizing the resulting compound oxide thermistor, and mixing and kneading the resulting thermistor powder with glass powder and oxide powder of Ru for adjusting a resistance.

Thick film thermistor composition

A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.

A gas detector with a layer of gas sensing material comprising an oxide semiconductor, wherein at least one coating layer each of a p-type oxide semiconductor and an n-type oxide semiconductor is provided in a multi-layer arrangement on the surface of said layer of gas sensing material that contacts the gas. The gas detector can selectively identify only specific gases.

Gas detector

A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors having different gas selectivities. The gas selectivities, as a characteristic constant of the specific gas sensor, was previously determined. The measured output voltages and gas selectivities are then used for solving plural simultaneous equations for gas concentrations.

Gas detection device and method for detecting gas

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Yokohama, Japan

Hideo Arima