Adamant Namiki Precision Jewel Co., Ltd.

Namiki Seimitsu Houseki Kabushiki Kaisha

Disco Corporation

Asahi Kogaku Kogyo Kabushiki Kaisha

Hideo Aida

Seongwoo Kim

Koji Koyama

Kenjiro Ikejiri

Natsuko Aota

Hitoshi Hoshino

Hidetoshi Takeda

Keiji Honjo

Kiyoshi Negishi

Shinyu Ikeda

Manabu Imoto

Mai Ogasawara

The crystal plane in the interior of the diamond substrate has a curvature higher than 0 kmand equal to or lower than 1500 kmby preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Diamond substrate

A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Diamond substrate and method for manufacturing diamond substrate

Diamond substrate and diamond substrate manufacturing method

Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element

Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.

Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element

Provided are a method of manufacturing a light-emitting element by which a light-emitting element () is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer () is formed on one face (T) of a monocrystalline substrate (A) for a light-emitting element. Next, the other face (B) of the monocrystalline substrate (A) for a light-emitting element is polished until a state where a vertical hole (A) penetrates the monocrystalline substrate (A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (B) from the side of the vertical hole (B) closer to an opening (B) in the other face (B) to form a conductive portion () that is continuous from a side closer to the light-emitting element layer () to the opening (B) in the other face (B).

Method for manufacturing light-emitting element, and light-emitting element

The present invention provides an intensity control device for a laser in a laser beam printer that produces a hard copy of image information by copy-processing a photosensitive surface scanned by the laser while it is in a scanning mode during which the laser is modulated by the image information. The intensity control device according to the present invention stores a first representation of a present light intensity of the laser during its non-scanning mode. It further stores a second representations of a user selected image density for a hard copy produced by the printer. The first and second representations are combined for forming a control voltage during a non-scanning mode of the laser. Finally, a current is produced that is supplied to the laser in response to the control voltage such that the intensity of light produced by the laser is dependent on both the first and second representations.

Growing community of inventors

Tokyo, Japan

Hideo Aida