Canon Kabushiki Kaisha

Sony Corporation

Hidenori Watanabe

Tatsuo Furukawa

Tomohiro Suzuki

Nobuyuki Hirayama

Ryo Kasai

Tadashi Okamoto

Masataka Sakurai

Nobuko Yamamoto

Hisanori Tsuda

Toru Koizumi

Yoshiyuki Imanaka

Akira Okita

Yasuyuki Tamura

Teruo Ozaki

Takayuki Yagi

Muga Mochizuki

Toshihiro Mori

Naoki Sano

Masaki Hara

Akira Asai

Masami Kasamoto

Yukihiro Hayakawa

Katsuhiko Shinjo

Hideshi Kuwabara

Kazuhito Hori

Takuya Makino

Junichi Hoshi

Kazuhiro Hane

Yoshimasa Okamura

Mamoru Tsukada

Yutaka Yuge

Kousuke Nakahata

A liquid discharging device includes a plurality of liquid discharge sections. Each liquid discharge section includes a reservoir, a nozzle that discharges a solution supplied from the reservoir, and discharge energy generating means that generates energy to discharge the solution from the nozzle. The number of the liquid discharge sections corresponds to the number of probe types to be formed. The nozzles are two-dimensionally arranged. Using this liquid discharging device, probe liquids are discharged from the corresponding reservoirs onto a solid-phase substrate to form a predetermined two-dimensional probe array of high-purity probes on the substrate. This process exhibits high reproducibility and processability, and the resulting probe array has high array density.

Method for making probe support and apparatus used for the method

An inkjet recording head substrate having an electrothermal transducer for generating thermal energy used to discharge ink and a drive element for driving the electrothermal transducer mounted thereon includes a first circuit portion for outputting selection signals for selecting the electrothermal transducer to be driven at a amplitude level of a second voltage higher than a first voltage based on an input signal of the amplitude level of the first voltage, a second circuit portion for inputting the selection signals from the first circuit portion and controlling the drive element corresponding to the electrothermal transducer to be driven based on the selection signals subject to the second voltage, and a plurality of signal lines for transmitting the selection signals between the first and second circuit portions.

Inkjet recording head substrate and drive control method, inkjet recording head, inkjet recording head cartridge and inkjet recording apparatus

A recording apparatus according to the present invention includes a temperature sensor to detect a temperature of a recording head and a control unit to control a pulse waveform, a pulse width forming a drive pulse, and a voltage. The drive pulse supplied to an electrothermal transducer is selected according to information about thermal conduction characteristics of the recording head and the temperature of the recording head detected by the temperature sensor.

Inkjet recording apparatus and inkjet recording method

A liquid ejection head includes a common liquid chamber for storing liquid, a plurality of flow paths that communicate individually with the common liquid chamber and through which liquid from the common liquid chamber flows, a plurality of ejection orifices that communicate individually with the plurality of flow paths and eject liquid supplied from the common liquid chamber, a plurality of ejection energy generating elements corresponding to the plurality of ejection orifices and generating energy necessary to cause liquid to be ejected from the plurality of ejection orifices, and a movable pressure buffer provided in the common liquid chamber and capable of absorbing a pressure wave generated by driving the plurality of ejection energy generating elements.

Liquid ejection head

A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline structure is destructed is exposed; further etching the area where the crystalline structure is destructed from the portion exposed by the anisotropic etching step thereby exposing the anisotropic etching stop layer; and eliminating the exposed anisotropic etching stop layer.

Method for producing liquid discharge head

To provide a small and lightweight optical switching element with a simple structure capable of fast response, and an optical switching apparatus employing the optical switching element. Optical extraction unit contacts an upper substrate with electrostatic attraction generated between a transparent electrode of the optical extraction unit and a transparent electrode of the upper substrate. In the case that light enters one V-shaped trench of the upper substrate vertically, the light enters the optical extraction unit of the upper substrate and is emitted from a back of the optical extraction unit (a tapered unit). Subsequently, the incident light P passes through a lower substrate and is converted into transmission light. With electrostatic attraction generated between a transparent electrode of the lower substrate and a transparent electrode of the optical extraction unit, the optical extraction unit is attracted to a lower substrate side. In this state, the incident light is caused the total reflection at a total reflection face. This total reflection light is emitted from the other V-shaped trench. The incident light can be switched in two ways: the transmission light and the total reflection light.

Optical switching element, switching apparatus and image display apparatus using optical switching element

In a driving method of an ink-jet recording head, heat is generated by applying a drive signal to a heating element, and this heat is applied to ink to generate a bubble and discharge the ink through a discharge outlet. The drive signal comprises a first drive signal for storing foaming energy in the ink, and a second drive signal for generating a bubble in the ink. The second drive signal has a signal time shorter than the boundary foaming time at which foaming energy decreases in a case of performing foaming only by the second drive signal. The first drive signal is applied prior to the second drive signal in order to compensate for a decrease in foaming energy.

Driving method of ink-jet recording head, and recording apparatus for performing the driving method

Upon executing printing by latching an input digital image signal temporarily stored in a shift register (,) by a latch circuit (,), and energizing and driving a heater (,) using a power transistor (,) using an nMOSFET on the basis of the latched image signal, a voltage converter (,) boosts a voltage representing the ON state of the latched digital signal, and applies the boosted voltage to the power transistor (,).

Recording head and recording apparatus using the same

An ink jet head is provided with heaters to generate energy to be utilized for discharging ink, and MOS transistors to supply electric power to the heaters for recording by discharging ink. For this ink jet head, the MOS transistors comprise source regions and drain regions formed by doping layers arranged near the surface of a semiconductor substrate, gates formed on the semiconductor substrate through an oxide film and arranged to cross over the source regions and the drain regions, and contact units formed by a doping layer different from that of the source regions, and arranged near the surface within the source regions in order to draw out electrons or holes to be unintentionally generated on the semiconductor substrate. With the structure thus arranged, the potential difference becomes smaller between the source regions and back gate area on the semiconductor substrate, making it possible to prevent heaters from being destroyed by any excessive current that may flow uncontrollably.

Ink jet head structure having MOS transistors for power supply, and head substrate, ink jet cartridge, and ink jet apparatus having the same

An Si semiconductor device has an emitter region, a base region and a collector region formed on a substrate substantially in parallel to a plane of the substrate. And at least one of the emitter region the base region and the collector region includes an SiGe mixed crystal semiconductor region formed by ion implantation of Ge.

Semiconductor device and method for manufacturing the same

A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.

Semiconductor device having an electrode which controls a surface state

A semiconductor device comprises an insulating region residing adjacent to a first semiconductor region, a control electrode residing via the insulating region, a second semiconductor region and a third semiconductor region, which have an opposite conduction type to that of the first semiconductor region, residing adjacent to and carrying therebetween the first semiconductor region. When the first, second and third semiconductor regions and the control electrode are grounded, the first semiconductor region in contact with the insulating layer is adjusted to be in weak inversion state, and the potential of the control electrode and that of the first semiconductor region are electrically coupled to be operable.

Growing community of inventors

Zama, Japan

Hidenori Watanabe