Fuji Electric Co., Ltd.

Hidenori Takahashi

Takeyoshi Nishimura

Yasushi Niimura

Takumi Fujimoto

Sota Watanabe

Takamasa Wakabayashi

Hitoshi Abe

Tohru Shirakawa

Seiji Noguchi

Hiroshi Miyata

Yoshiharu Kato

Naoya Shimada

Tatsuya Naito

Yuichi Onozawa

Takashi Yoshimura

Yasunori Agata

Daisuke Ozaki

Naoki Mitamura

Aki Shimamura

A semiconductor device includes a plurality of first trenches each having a stripe-shape, extending in parallel to each other, a first mesa region, a second mesa region, a first interlayer insulating film covering the first mesa region and the second mesa region, and a first contact hole penetrating the first interlayer insulating film to the first mesa region, and extending along a longitudinal direction of the first trenches. The first mesa region includes emitter regions of a first conductivity type periodically provided along the longitudinal direction of the first trenches in a plan view, contact regions of a second conductivity type provided such that each of the emitter regions is interposed between the contact regions along the longitudinal direction in the plan view, and a base region of the second conductivity type provided immediately below the emitter regions and the contact regions.

Semiconductor device

A semiconductor device is provided, wherein a semiconductor substrate includes: a first trench portion provided from a front surface of the semiconductor substrate to a predetermined depth, and having a longer portion and a shorter portion as seen from above; and a first conductivity-type floating semiconductor region at least partially exposed on the front surface and surrounded by the first trench portion, an interlayer insulating film has openings to electrically connect an emitter electrode and the floating semiconductor region, the openings include: a first opening closest to an outer end of the floating semiconductor region in a direction parallel to the longer portion; and a second opening second closest to the outer end in the direction parallel to the longer portion, and a distance between the first opening and the second opening is shorter than a distance between any adjacent two of the openings other than the first opening.

A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.

Semiconductor device and method for manufacturing the same

A semiconductor device includes one or more trench gates extending in a first direction in plan view, one or more first-conductivity-type regions spaced away from each other in the first direction, where the first-conductivity-type regions are shallower than the trench gates, one or more second-conductivity-type regions alternating with the first-conductivity-type regions in the first direction, where the second-conductivity-type regions are shallower than the trench gates and deeper than the first-conductivity-type regions, and a second-conductivity-type trench spacer region spaced away from the one or more trench gates, where the trench spacer region has a higher concentration than the second-conductivity-type regions. Here, the trench spacer region is positioned within the first-conductivity-type regions in plan view and closer to a back surface of the semiconductor device than the first-conductivity-type regions are.

Semiconductor device and manufacturing method of semiconductor device

To provide a semiconductor device in which an edge termination structure can be made smaller easily. A semiconductor device is provided, the semiconductor device including an active region and an edge termination structure formed on a front surface side of a semiconductor substrate, wherein an edge termination structure has a guard ring provided surrounding an active region on a front surface side of a semiconductor substrate, a first field plate provided on a front surface side of a guard ring, an electrode unit provided on a front surface side of a first field plate, a second field plate provided between a first field plate and a electrode unit, and a conductive connecting unit which mutually electrically connects a first field plate, an electrode unit, a second field plate, and a guard ring.

A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Semiconductor device and method of manufacturing the same

A screen oxide film is formed on an n&#x2212; drift layer () that is disposed on an anterior side of an n-type low-resistance layer (), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film () is formed. N-type impurity ions at a concentration higher than that of the n&#x2212; drift layer are implanted through the nitride shielding film () from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer () is formed. The screen oxide film is removed. A gate oxide film () is formed. A gate electrode () is formed on the gate oxide film (). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, p&#x2212; well regions () are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, n source regions () are formed.

Manufacturing method of semiconductor apparatus and semiconductor apparatus

A screen oxide film is formed on an n-drift layer () that is disposed on an anterior side of an n-type low-resistance layer (), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film () is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film () from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer () is formed. The screen oxide film is removed. A gate oxide film () is formed. A gate electrode () is formed on the gate oxide film (). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, p- well regions () are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, n source regions () are formed.

A screen oxide film is formed on an n&#x2212; drift layer () that is disposed on an anterior side of an n-type low-resistance layer (), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film () is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film () from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer () is formed. The screen oxide film is removed. A gate oxide film () is formed. A gate electrode () is formed on the gate oxide film (). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, p&#x2212; well regions () are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, n source regions () are formed.

A semiconductor device includes a first gate electrode that is provided on a first insulating film along one side wall of a first trench and is provided in a second trench, a shield electrode that is provided on a second insulating film along the other side wall of the first trench and is provided in a third trench, a gate runner that is an extended portion of the second trench, has a portion which is provided on the first gate electrode, and is connected to the first gate electrode, and an emitter polysilicon layer that is an extended portion of the third trench, has a portion which is provided on the shield electrode, and is connected to the shield electrode. The semiconductor device has improved turn-on characteristics with a slight increase in the number of process steps, while preventing increase in costs and reduction in yield.

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Matsumoto, Japan

Hidenori Takahashi