The University of Tokyo

Riken Corporation

National Institute of Advanced Industrial Science and Technology

Canon Kabushiki Kaisha

Nippon Paper Industries Co., Ltd.

National Institute of Agrobiological Sciences

Toudai Tlo, Ltd.

Nec Schott Components Corporation

Hitachi System, Ltd.

Hidenori Takagi

Yoshinori Tokura

Yoshinobu Nakamura

Shinichi Uchida

Tatsuya Iwasaki

Tatsuya Saito

Toru Den

Hiroyuki Akinaga

Fumio Takaiwa

Yoshichika Otani

Saori Kasahara

Isao Inoue

Yuji Fujii

Yasuhiro Fukuma

Seiji Niitaka

Kimitoshi Kono

Jobu Matsuno

Kohei Fujiwara

Toshihito Kon

Daigo Takaoka

Fumiya Akamatsu

Shuichiro Yasuda

Kouhei Fujiwara

Koshi Takenaka

Nao Takeshita

Yuhya Wakasa

Chieko Terakura

Tomotaka Shinya

The heat storage material of the present invention is a heat storage material comprising a substance that induces an electronic phase transition, wherein the electronic phase transition is a phase transition of multiple degrees (associated) with freedom including a spin degree of freedom and an orbital degree of freedom, which are internal degrees of freedom of electrons, and the substance is VCrO(0&#x3c;X&#x2266;0.23).

Heat storage material

An electric current-spin current conversion device according to the invention performs conversion between electric current and spin current utilizing the spin Hall effect or the inverse spin Hall effect of a 5d transition metal. A spin accumulation apparatus according to the invention includes a non-magnetic body in which injected spins are accumulated and an injection unit that injects spins into the non-magnetic body, wherein said injection unit comprises said electric current-spin current conversion device provided on said non-magnetic body, and an electric power source that supplies an electric current to said electric current-spin current conversion device in such a way that a spin current flowing toward said non-magnetic body is generated by the spin Hall effect.

Electric current-spin current conversion device

It is an object of the present invention to provide a protein that can successfully treats almost all patients with cedar pollinosis and can be ingested as a food. That is, the present invention provides a protein comprising an amino acid sequence represented by SEQ ID NO:1 or comprising an amino acid sequence having a mutation(s) in said amino acid sequence, and having an immunogenicity of a cedar pollen; a polynucleotide encoding said protein; a vector comprising said polynucleotide; a transformant comprising said polynucleotide or said vector; and intended uses of said protein, said polynucleotide, and said transformant.

Protein having immunogenicity of cedar pollen, polynucleotide encoding the protein, and use thereof

Provided is a radiation detecting element, including: a semiconductor layer including a tin oxide crystal; and a detecting unit configured to detect, as an electrical signal, charges generated in the semiconductor layer when the semiconductor layer is irradiated with radiation, in which a resistivity of the semiconductor layer is 10&#x3a9;&#xb7;cm or more.

Radiation detecting element using oxide crystal and method of manufacturing oxide crystal

Operations of a building facility monitoring device and an IP network monitoring device are coordinated with each other. In a connection system of a building facility device managing system, when a status of the IP network monitoring device is changed, a monitoring-device-status managing unitprovides parameter information unique for a BACnet protocol to the changed status and stores it. If the status is not an operation command, a coordinated-packet-generation transmitting/receiving unitgenerates a packet of the BACnet protocol based on a status and parameter information of a specific IP network monitoring device to transmit it to a building facility device managing system. If the status is the operation command, it acquires a status and parameter information of the specific IP network monitoring device from a management database, and generates a packet of the BACnet protocol based on the status and the parameter information to transmit it to the building facility device managing system

Connection system of building facility device managing system, connection method of building facility device managing system, and connection program of building facility device managing system

An objective of the present invention is to provide a switching device that shows two markedly different stable resistance characteristics reversibly and repetitively, and which is applicable to highly integrated nonvolatile memories. The present invention provides a switching device, which comprises a variable resistor element that has, between two electrodes, a metal-oxide thin-film comprising a single central metal element with a compositional variation; which is connected to a control circuit which can apply, between said two electrodes, a voltage or a current selected from among a voltage or a current of the first threshold or higher, a voltage or a current of the second threshold or lower whose absolute value is smaller than the absolute value of said first threshold, and a voltage or a current of the third threshold or lower whose absolute value is smaller than the absolute value of said second threshold; and in which the interelectrode resistance characteristic reversibly changes by a factor of 1,000 to 10,000 in the voltage or current region whose absolute value is equal to or below the third threshold.

Switching device

A thermistor device having a high-speed response to temperature and a large ON/OFF ratio at the operating temperature. The thermistor device comprises a first layer of a first material having a positive temperature coefficient of resistance and a second layer of a second material having a semiconductivity and formed directly on the first layer. As the first material changes from conductive to a semiconductive or an insulative at or near the transition temperature T, the interface between the first and second layer changes to a pn junction.

Thermistor device

Provided is a thermal expansion inhibitor which has a much broader application range and which can be used with ease. Used is a thermal expansion inhibitor comprising a manganese nitride crystal.

Thermal expansion inhibitor, zero thermal expansion material, negative thermal expansion material, method for inhibiting thermal expansion, and method for producing thermal expansion inhibitor

Disclosed is a high-pressure generation apparatus, which comprises a pair of columnar-shaped anvils disposed in opposed relation to one another to define a pressure-generating space therebetween. The anvils are adapted to be applied with a load therebetween to generate a high pressure in the pressure-generating space. Each of the anvils has a top portion formed in an approximately circular truncated cone shape, and the top portion has a central region formed with a depression having a side surface which extends obliquely outward. The high-pressure generation apparatus also includes a cylindrical capsule disposed in a central area of the pressure-generating space, and a laminated member formed by alternately laminating a doughnut-shaped metallic thin plate and a doughnut-shaped insulating member along the outer periphery of the capsule. The improved shape of the depression makes it possible to significantly reduce damages of the components. In addition, the laminated member formed of the metallic thin plate and the insulating member originally used for sealing the pressure-generating space makes it possible to generate a higher pressure.

High-pressure generation apparatus

The disclosed superconducting oxide material has a crystal structure of either Nd.sub.2 CuO.sub.4 type or oxygen-deficient perovskite type and mainly consists of a composition having a general chemical formula of (R.sub.1-x A.sub.x).sub.m+1 Cu.sub.m O.sub.3m+1-y, R being at least one rare earth element selected from the group consisting of Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm, Yb, and Lu, A being Ce or Th, m being an integer of 1, 2, 3, . . . .infin. (m=.infin. standing for (R.sub.1-x A.sub.x)CuO.sub.3-y), 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.m, Cu in the material having an average valence of not larger than +2 for all R, A, m, x, and y. The disclosed superconducting oxide material may have a general chemical formula of Nd.sub.2-x-z Ce.sub.x Sr.sub.z CuO.sub.4-y, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1. The above superconducting oxide material can be made by mixing powdery starting materials for the composition, sintering the mixture at 1,000.degree. to 1,100.degree. C. in air, and heat treating the sintered mixture at 900.degree. to 1,100.degree. C. in a reducing atmosphere (with an oxygen partial pressure of less than 10.sup.-2 atm.)

Method for producing a R-Ce-Cu-O superconducting material wherein R is

R-Ce-Cu-O superconducting oxide material wherein R is at least one

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Tokyo, Japan

Hidenori Takagi