Tokyo Electron Limited

Nippon Telegraph and Telephone Corporation

Hidenori Satoh

Masaaki Sato

Masahiro Ogasawara

Yoshinobu Arita

Hiromitsu Kanbara

An object to be etched is loaded in a low-pressure vapor phase processing chamber, and then an etching gas obtained by adding a small amount of additive gas of oxygen or additive gas at least containing oxygen to a reaction gas used for etching is fed to the low-pressure vapor phase processing chamber so as to suppress a reaction between the wall of the low-pressure vapor phase processing chamber and the reaction gas. In this state, the object to be etched is dry-etched with the etching gas.

Growing community of inventors

Tama, Japan

Hidenori Satoh