Nippon Electric Co., Ltd.

Hidenori Nomura

Mitsunori Sugimoto

Shigeo Matsushita

Hiroshi Honmo

According to the present invention, an active semiconductor layer is provided on a mesa top of a semiconductor substrate having a strip-shaped mesa structure. A first clad layer is provided on the surface of the active layer and on the sides of the mesa to burry the top active region. Thereafter a pair of current blocking layers are provided on the first clad layer except for the top surface portion of the mesa stripe and a second clad layer is provided on the current blocking layers and the exposed first clad layer.

Buried heterostructure laser diode

There is disclosed a method of producing dielectric diffraction gratings. This method comprises (a) preparing a preform by forming one upon another layers of two or more glasses having different refractive indices at a given period, and (b) cutting the preform into flat pieces.

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Tokyo, Japan

Hidenori Nomura