Tokyo Electron Limited

Fujitsu Corporation

Ebara Corporation

National Institute of Advanced Industrial Science and Technology

Tohoku University

Nagoya University

Hidenori Miyoshi

Hitoshi Itoh

Hiroshi Sato

Kenji Matsumoto

Shuji Azumo

Kazuichi Hayashi

Isao Gunji

Junichi Koike

Masaru Hori

Yoshihiro Nakata

Shigeru Tahara

Akitaka Shimizu

Makoto Sekine

Masamichi Hara

Kohei Kawamura

Yukio Takigawa

Hiroyuki Takahashi

Takashi Akahori

Yasuhiro Oshima

Koichi Nagakura

Koichi Takatsuki

Koji Neishi

Shigeki Doba

Kenji Ishikawa

Shuuichi Ishizuka

Gishi Chung

Shigetoshi Hosaka

Hirotaka Toyoda

Hikaru Yoshitaka

Hajime Naito

Hideki Tateishi

Shigeo Ashigaki

Takuya Abe

Daisuke Urayama

Nobuhiro Hata

Syoichi Abe

Yoichi Inoue

Kazuo Komura

There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

Substrate processing method and substrate processing apparatus

There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

Etching method and etching apparatus

A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing containerof a plasma processing apparatusin which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container, and a third step of generating a plasma of a third gas in the processing container. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

Method for etching copper layer

Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound.

Method for forming barrier film on wiring line

In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

Substrate processing apparatus

A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

Film forming method, pretreatment device, and processing system

Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor

A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si&#x2014;OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si&#x2014;OH groups have been formed through a CVD method.

Film forming method and film forming apparatus

A method for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air includes: hydrophobizing a surface of the processing chamber by introducing a hydrophobic gas into the processing chamber without the object to be processed accommodated in the processing chamber; and forming the thin film by introducing the organic metal raw material gas into the processing chamber with the object to be processed accommodated in the processing chamber.

Method for forming a film

There is provided a film forming method for forming a film on a target object having thereon an insulating layerthat is made of a low-k film and having a recesswhose bottom surface is exposed to a metallic layer. The film forming method includes forming a first-metal-containing film containing a first metal such as ruthenium (Ru); and after forming the first-metal-containing film, forming a second-metal-containing film containing a second metal such as a manganese (Mn) having a barrier property against a filling metal to be filled in the recess.

Barrier layer, film forming method, and processing system

An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.

Plasma generating apparatus, plasma processing apparatus and plasma processing method

Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

That surface of an electrode platewhich is opposite to a susceptorhas a projection shape. The electrode plateis fitted in an openingof shield ringat a projection. At this time, the thickness of the projectionis approximately the same as the thickness of the shield ringAccordingly, the electrode plateand the shield ringform substantially the same plane. The major surface of the projectionhas a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plateis formed of, for example, SiC.

Plasma process device and plasma process method

[Problems]There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness. [Means for Solving the Problems] A metal oxide film forming method includes a process (1) of supplying a metal source gas to a surface of a base before a temperature of the base reaches a film formation temperature of a metal oxide film; and a process (2) of setting the temperature of the base to be equal to or higher than the film formation temperature and forming the metal oxide film on the base by making a reaction between the metal source gas supplied to the surface of the base and residual moisture on the surface of the base.

Metal oxide film formation method and apparatus

A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

Semiconductor device manufacturing method and target substrate processing system

Growing community of inventors

Nirasaki, Japan

Hidenori Miyoshi