Sony Semiconductor Solutions Corporation

Hidenori Maeda

Hiroshi Takahashi

Ryoichi Nakamura

Masahiko Tsujita

Daisuke Washio

To prevent leakage of incident light from pixels around a pixel region () of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (). In the pixel region, a plurality of pixels () is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate () in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens () that focuses the incident light on the photodiode, and a wiring region () having a wiring layer () connected to the photodiode and an insulating layer () that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens () having a curvature different from a curvature of the on-chip lens, and the wiring region.

Light receiving element and distance measuring device

Provided is a solid-state imaging device that includes a first substrate that has one principal surface on which a pixel portion in which pixels are arranged is formed, a second substrate which is bonded to a surface of the first substrate opposed to the one principal surface and in which an opening is provided in a partial region in a surface opposed to a bonding surface to the first substrate is provided. The solid-state imaging device further includes at least one sub-chip inside the opening so as not to protrude from the opening and in which a circuit having a predetermined function is formed.

Growing community of inventors

Kanagawa, Japan

Hidenori Maeda