Nara Institute of Science and Technology

Hidenori Koketsu

Tomoaki Hatayama

Yoshihiro Todokoro

Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8&#xb0; or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from &#x2212;8&#xb0; to 8&#xb0; in the &#x3c;1-100&#x3e; direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800&#xb0; C. with nitrogen gas as the carrier.

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Nara, Japan

Hidenori Koketsu