Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Hidenori Kamei

Toshihide Maeda

Yasunari Oku

Shozo Oshio

Kei Sakanoue

Tadaaki Ikeda

Katsuaki Iwama

Yasuyuki Hanada

Hiromi Kitahara

Yoshitaka Kinoshita

Hidemi Takeishi

Syuusaku Maeda

Atsuhiro Hori

Kazuyuki Yamae

Tomoya Iwahashi

Hiroshi Fukshima

Kenichi Koya

Kunihiko Obara

Masaharu Yasuda

Yoshirou Tooya

Yoshiyuki Ide

Takahiro Shirahata

Isamu Yonekura

Syuuichi Shinagawa

Koichi Nakahara

Kouji Nakatsu

Shuichi Shinagawa

Toshirou Kitazono

Shuuichi Shinagawa

A chip-type light-emitting semiconductor device includes: a substratea blue LEDmounted on the substrateand a luminescent layermade of a mixture of yellow/yellowish phosphor particlesand a base material(translucent resin). The yellow/yellowish phosphor particlesis a silicate phosphor which absorbs blue light emitted by the blue LEDto emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (SrBaCaEu)SiO(0&#x2264;a1&#x2264;0.3, 0&#x2264;b1&#x2264;0.8 and 0&#x3c;x&#x3c;1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Luminescent layer and light-emitting semiconductor device

Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.

Semiconductor light-emitting device and manufacturing method of the same

A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided. A light emitting elementincludes a substratehaving light transmittance, a semiconductor layerin which an n-type layer, an active layer, and a p-type layerare stacked, a reflective electrodestacked on the semiconductor layerand configured to reflect light emitted from the active layer, toward the substrate, a p-side pad electrodestacked on the reflective electrode, an insulating filmcovering a side surface of the semiconductor layerand having light transmittance, a reflective filmstacked on the insulating filmand having light reflectivity, and an n-side electrodeprovided on the substrate

Light emitting element and light emitting device

A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

Method of manufacturing semiconductor light emitting element

In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

Semiconductor light emitting element and semiconductor light emitting device using the same

A semiconductor light emitting element includes a substratehaving a defect concentrated regionwhich has a crystal defect density higher than in the other region. On the substrate, a semiconductor layeris formed. On the defect concentrated region, a first electrodeis formed. On the semiconductor layer, a second electrodeis formed.

Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region

A plurality of semiconductor layers including a light-emitting layer () are formed on the main surface of a substrate () which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer () containing indium is formed between the light-emitting layer () and the substrate (), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.

Nitride-based semiconductor light-emitting diode and illuminating device

In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield. A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.

Semiconductor light emitting element and method for manufacturing semiconductor light emitting device

There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting elementformed by laminating a compound semiconductor layeron a single crystal substrate, and dividing the single crystal substrate into pieces, the side facestoof each of substrate piecesas the divided single crystal substrate are formed such that the side faceused as the reference of the substrate pieceforms an angle of 15&#xb0; with respect to the (1-100) plane, and that the side facestoare formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.

Semiconductor light emitting element and wafer

A semiconductor light emitting device includes a substrateincluding a group III-V nitride semiconductor; a first-conductivity-type layerformed on the substrate, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layerformed on the first semiconductor layer; and a second-conductivity-type layerformed on the active layer, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layerincludes an intermediate layermade of GaInN (0&#x3c;x&#x3c;1).

Semiconductor light emitting device

A chip-type light-emitting semiconductor device includes: a substrate; a blue LEDmounted on the substrate; and a luminescent layermade of a mixture of yellow/yellowish phosphor particlesand a base material(translucent resin). The yellow/yellowish phosphor particlesis a silicate phosphor which absorbs blue light emitted by the blue LEDto emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (SrBaCaEu)SiO(0&#x2266;a&#x2266;0.3, 0&#x2266;b&#x2266;0.8 and 0&#x3c;x&#x3c;1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device

A chip-type light-emitting semiconductor device includes: a substrate; a blue LEDmounted on the substrate; and a luminescent layermade of a mixture of yellow/yellowish phosphor particlesand a base material(translucent resin). The yellow/yellowish phosphor particlesis a silicate phosphor which absorbs blue light emitted by the blue LEDto emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (SrBaCaEu)SiO(0&#x2266;a1&#x2266;0.3, 0&#x2266;b1&#x2266;0.8 and 0&#x3c;x&#x3c;1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlGaInN (wherein 0.001&#x2266;x&#x3c;0.1, 0&#x3c;y&#x3c;1 and x+y&#x3c;1).

Growing community of inventors

Fukuoka, Japan

Hidenori Kamei