Tdk Corporation

Hitachi Chemical Company, Ltd.

Showa Denko Materials Co., Ltd.

Hidenori Abe

Hisatoshi Saitou

Takao Noguchi

Takashi Masuko

Tomoaki Shibata

Tomonori Minegishi

Hanako Yori

Shunsuke Otake

Yoshihiko Yano

Eiju Komuro

Yoshinari Yamashita

Keizo Takemiya

A resin film includes a resin composition for forming a flexible resin layer. The resin composition includes an elastomer, a polymerizable compound, and a polymerization initiator. A laminated film includes a base material film, a resin film formed on the base material film, and a protective film attached to the resin film.

Resin film, and laminated film including base material film, resin film formed on base material film, and protective film attached to resin film

Disclosed is a method for producing a semiconductor device including a circuit board having a flexible resin layer that encapsulates a circuit component. The method may include a step of immersing a flexible substrate in an encapsulant, drying the encapsulant, and thereby encapsulating the circuit component with the encapsulant; and a step of curing the encapsulant, and thereby forming a flexible resin layer.

Method for producing semiconductor device

Semiconductor device and manufacturing method therefor, and resin composition for forming flexible resin layer

A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.

Substrate for electronic device, electronic device and methods of manufacturing same

A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.

Piezoelectric resonant filter and duplexer

An electronic device substrate structure including a substratea metal thin filmas a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrateand a wurtzite type thin filmas a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin filmwherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin filmis a (111)-oriented film, &#x3c;11-20&#x3e; axes in the plane of the wurtzite type thin filmare parallel to &#x3c;1-10&#x3e; axes in the plane of the metal thin filmand when the metal thin filmis a (0001)-oriented film, &#x3c;11-20&#x3e; axes in the plane of the wurtzite type thin filmare parallel to &#x3c;11-20&#x3e; axes in the plane of the metal thin film

Electronic device substrate structure and electronic device

The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

Multilayer thin film and its fabrication process as well as electron device

In the present invention, provided are i) an encapsulant epoxy resin composition comprising an epoxy resin, a curing agent, a non-conductive carbon and an inorganic filler, and ii) an electronic device having an encapsulating member comprising a cured product of this composition.

Encapsulant epoxy resin composition and electronic device

An object of the invention is to provide a piezoelectric bulk acoustic wave device having a high effective electromechanical coupling constant and allowing a fractional bandwidth to be broadened when applied to a filter and a normalized frequency variable width to be broadened when applied to an oscillator. Another object of the invention is to provide a miniature piezoelectric bulk acoustic wave device capable of operating at a high frequency of several hundreds of megahertz while maintaining a high electromechanical coupling constant. The piezoelectric bulk acoustic wave device includes a piezoelectric substrate constructed of a single crystal or oriented crystal body of potassium niobate and having a pair of major surfaces, and at least one pair of opposed electrodes formed on the major surfaces of the piezoelectric substrate, respectively, wherein the device utilizes thickness vibration propagating along the major surfaces.

Piezoelectric bulk acoustic wave device

A thin film piezoelectric device has an epitaxial metal thin film (,) on a silicon substrate (,) and a PZT thin film (,) on the metal thin film, the PZT thin film (,) having a Ti/(Ti&plus;Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.

Growing community of inventors

Tokyo, Japan

Hidenori Abe