Asahi Kasei Kabushiki Kaisha

Hidenobu Nakazawa

Takayuki Watanabe

A solar cell having a semiconductor layer of a chalcopyrite structure as a light absorption layer and using a flexible film as a substrate, breakdown and peeling caused to the semiconductor layer of the chalcopyrite structure due to warp of the flexible film upon heat treatment is prevented. To realize this, a poly(phenylene terephthalmide) film having a coefficient of heat expansion of 5.0&times;10,/&deg; C. is used as a substrate (,). After a Ti reinforcing layer (,) is disposed on the entire back surface of this substrate (,), a first electrode layer (,) is disposed on the front surface of this substrate (,), and a p-type semiconductor layer (,) of a chalcopyrite structure is formed as a light absorption layer on the surface of the first electrode layer (,).

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Fuji, Japan

Hidenobu Nakazawa