Sharp Kabushiki Kaisha Corporation

Hidenobu Kimoto

Tetsuya Tarui

Takehiko Kawamura

Yoshihiro Seguchi

Takehisa Sugimoto

Masahiro Yoshida

Junichi Morinaga

A method for manufacturing an active matrix substrate includes: (A) a step of forming a laminated film including a lower conductive film, a lower insulating film, and a semiconductor film in this order on a substrate; (B) a step of forming a first resist layer; (C) a step of performing a patterning on the laminated film, the step including, in the first formation region, forming the first substructure including a first lower conductive layer, a first lower insulating layer, and a first semiconductor layer respectively formed from the lower conductive film, the lower insulating film, and the semiconductor film, and (D) a step of forming source and drain electrodes electrically connected to the first semiconductor layer.

Active matrix substrate and method for manufacturing same

An active matrix substrate includes a thin film transistor having a gate electrode, an oxide semiconductor layer disposed on the gate electrode via a gate insulating layer, and a source electrode and a drain electrode disposed on the oxide semiconductor layer. A plurality of gate bus lines and the gate electrode are made of a first electrically conductive film. At least part of each of the plurality of source bus lines, the source electrode, and the drain electrode have a multilayer structure including a lower layer that is made of a second electrically conductive film and an upper layer that is made of a first transparent electrically conductive film. Between the plurality of source bus lines and the gate insulating layer, a plurality of first oxide strips extending along the first direction are disposed, the first oxide strips being made of the same oxide semiconductor film as the oxide semiconductor layer. Each of the plurality of source bus lines is located on an upper face of the corresponding first oxide strip, and a width of each of the plurality of source bus lines along a second direction is smaller than a width of one corresponding first oxide strip along the second direction.

Active matrix substrate

A liquid crystal display panel () according to the present invention includes a plurality of spacers configured to hold a gap between a first substrate () and a second substrate (). The plurality of spacers include a plurality of first spacers in a display region and a plurality of second spacers () in a non-display region. The first substrate includes a first metal layer () and a second metal layer (), a first transparent conductive layer () formed on the second metal layer and in direct contact with the second metal layer, a second inorganic insulating layer () formed on the first transparent conductive layer, and an organic insulating layer () formed on the second inorganic insulating layer. When viewed from the normal direction of the first substrate, each of the plurality of spacers overlaps with the first transparent conductive layer and the second inorganic insulating layer, and overlaps with the first metal layer and/or the second metal layer. Each of the plurality of spacers includes a part of the organic insulating layer.

Liquid crystal display panel and method for manufacturing same

There are provided a display device including a highly reliable wiring having excellent adhesion to an insulating film, and a method for manufacturing the same. A molybdenum-niobium layer has good adhesion to an insulating film, and thus, a first wiring having the molybdenum-niobium layer as an upper layer wiring is tightly adhered to a gate insulating film which is formed on the surface of the upper layer wiring. When there is a need to exchange a semiconductor chip mounted on a connection terminal that is provided at an end portion of a wiring such as a gate lead line or a source lead line formed of the first wiring, an ACF which was used for pressure-bonding of the semiconductor chip remains on the connection terminal even if the semiconductor chip is peeled off. To thoroughly remove the ACF, a force has to be applied to the connection terminal, but because the gate insulating film is tightly adhered to the molybdenum-niobium layer, the gate insulating film protecting the periphery of the connection terminal is not easily peeled off.

Method for manufacturing display device including a wiring layer of a molybdenum-based material

An active matrix substrate for a liquid crystal panel of an FFS mode includes a plurality of connecting units in a connecting region in order to electrically connect a common electrode, a first common main wiring, and a second common main wiring. The connecting unit includes a contact holethat connects a connecting electrodeand the first common main wiring, the connecting electrodeformed integrally with the common electrode, and a contact holethat connects the connecting electrodeand the second common main wiring. An amorphous Si filmof the second common main wiringis formed larger than a main conductor partof the second common main wiringin a position of the contact hole, and is covered with SiNx filmsthat are protective insulating films. This prevents the connecting electrode from having a step disconnection at a pattern end of the common main wiring.

Active matrix substrate, liquid crystal panel, and method for manufacturing active matrix substrate

An active matrix substrate in a liquid crystal panel of an FFS mode has a data lineincluding an amorphous Si film, an n+amorphous Si film, a main conductor part, and an IZO film. The main conductor partand the IZO filmare etched at a portion close to the end of a covered region of a photoresist, to form the n+amorphous Si filmlarger than the main conductor partand the IZO film. A pattern of a photomask for a source layer is made larger than a pattern of a photomask for a pixel electrode layer, to form the amorphous Si filmlarger than the n+amorphous Si film. The main conductor partis formed of a molybdenum-based material, and in a layer over the data line, two-layered protective insulating films are formed such that a compressive stress is generated in one film and a tensile stress is generated in the other film. Accordingly, a high-yield active matrix substrate having a common electrode is provided.

Growing community of inventors

Sakai, Japan

Hidenobu Kimoto