Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Hidenari Yoshida

Shuhei Saido

Yusaku Okajima

Tomoshi Taniyama

Takafumi Sasaki

Takayuki Nakada

Hidetoshi Mimura

Takatomo Yamaguchi

Takeo Hanashima

Shigeru Odake

Hitoshi Murata

Takashi Yahata

Hiroaki Hiramatsu

Yuichi Wada

Tsuyoshi Takeda

Tsukasa Kamakura

Taketoshi Sato

Toru Kagaya

Atsushi Hirano

Mitsunori Ishisaka

Mitsunori Takeshita

Daigo Yamaguchi

Kenji Ono

Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Substrate processing device, manufacturing method for semiconductor device, and reaction tube

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate retainer in a reaction chamber, wherein the substrate retainer is provided with a plurality of slots capable of accommodating a plurality of substrates in a multistage manner; (b) repeatedly performing a set including: (b-1) moving the substrate retainer so as to locate one or more of the slots outside the reaction chamber; and (b-2) charging one or more of the substrates into the one or more of the slots; and (c) moving the substrate retainer such that the plurality of substrates charged in the plurality of slots are accommodated in the reaction chamber.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

Described herein is a technique capable of adjusting a balance in film thickness between surfaces of a plurality of substrates stacked in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: a process chamber capable of accommodating a plurality of substrates; a gas supplier configured to supply a process gas to the plurality of the substrates in the process chamber; a gas exhauster configured to discharge the process gas from the process chamber; and a plurality of disks interposed between the plurality of the substrates, respectively, and in vicinity of back surfaces of the plurality of the substrates.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Substrate processing apparatus, quartz reaction tube and method of manufacturing semiconductor device

Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Substrate processing apparatus

Return nozzle

Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.

Substrate processing apparatus, and method for manufacturing semiconductor device

Supporting column of insulation unit for semiconductor manufacturing apparatus

Provided is a processing container formed of a reaction tube and a manifold that supports the reaction tube from below, and adapted to process a substrate inside, a nozzle adapted to supply a processing gas to the substrate, and a connecting portion adapted to erect the nozzle inside the processing container. The connecting portion includes (1) a fixing portion formed of a cylindrical portion inserted into an introduction portion provided at the manifold, and a flange plate formed at an end portion of the cylindrical portion, and (2) a detachable portion formed of an elbow engaged with the flange plate, and an installation portion in which the nozzle is installed.

Growing community of inventors

Toyama, Japan

Hidenari Yoshida