Nec Corporation

Nec Electronics Corporation

Kanto Kagaku Kabushiki Kaisha

Renesas Electronics Corporation

Sumitomo Chemical Company, Limited

Organo Corporation

Other

Kanto Chemical Co., Inc.

Hidemitsu Aoki

Hiroaki Tomimori

Shinya Yamasaki

Norio Ishikawa

Tatsuya Suzuki

Kaori Watanabe

Masaharu Nakamori

Yoshiko Kasama

Tatsuya Usami

Yoshimi Shiramizu

Hirofumi Seo

Haruto Hamano

Masayuki Takashima

Kiyoto Mori

Keiji Hirano

Kenichi Nakabeppu

Tatsuya Koito

Akira Furuya

Norio Okada

Koji Yamanaka

Yasushi Sasaki

Koichi Ohto

Yasuaki Tsuchiya

Hiroshi Kitajima

Kaoru Mikagi

Makoto Morita

Yukinari Yamashita

Takashi Imaoka

Takashi Futatsuki

Takuo Ohwada

Yumiko Abe

Toshiyuki Iwamoto

Takuo Oowada

Tetsuya Tao

Kaoru Ikegami

Takamasa Tanikuni

Kenichi Tokioka

Toshiyuki Takewaki

Kenichi Yamamoto

Yuji Shimizu

Takeshi Takeda

Tsutomu Nakajima

Hiroyuki Kunishima

Yorinobu Kunimune

Tomoko Wake

Takamasa Itou

Mieko Hasegawa

Nahomi Ohta

Nobuo Hironaga

Mikio Tsuji

Makoto Iuchi

Toshikazu Shimizu

Tatsuya Koita

A method of manufacturing a semiconductor device includes preparing a semiconductor wafer having a device area, an end face, and a surface peripheral area located outside the device area and between the end face and the device area. Forming a Cu layer on the semiconductor wafer and rotating the wafer in a horizontal plane. Emitting a first liquid from an edge nozzle towards the surface peripheral area which selectively removes a first unnecessary material in the surface peripheral area. Emitting a protecting liquid toward the semiconductor wafer, thereby protecting the device area from the first liquid. An angle of a longitudinal axis of the edge nozzle with respect to a tangent of the semiconductor wafer at a point, where the longitudinal axis of the edge nozzle intersects the end face of the wafer, is set in the range of 0 to 90 degrees in plan view.

Etching and cleaning methods and etching and cleaning apparatuses used therefor

A first oxide film and a second oxide filmare formed in a first regionand a second regionrespectively, on the surface of the semiconductor substrate, via thermal oxidization method, and the first oxide film is removed while the second oxide filmis covered with the resist layerformed thereon, and then the resist layeris removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide filmhaving different thickness than the second oxide filmis formed in the first region

Method for manufacturing semiconductor device and semiconductor device

A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

Manufacturing method for semiconductor device

An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide filmis formed on a silicon substrateby thermal oxidation, and a high dielectric constant insulating filmcomprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layerand high dielectric constant insulating filmare selectively removed in stages by a dry etching through a mask of the resist layer, and subsequently, the residual portion of the high dielectric constant insulating filmand the silicon oxide filmare selectively removed by wet etching through a mask of polycrystalline silicon layer. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

Method of forming a high-k film on a semiconductor device

The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnectcomprises a silicon-lower concentration regionand a silicon solid solution layerdisposed thereon. The silicon solid solution layerhas a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnectto be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layerhas the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.

Semiconductor device and method for manufacturing same

The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.

Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device

An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

Process for making a semiconductor device having a roughened surface

A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.

Method for removing contamination and method for fabricating semiconductor device

A first oxide film and a second oxide filmare formed in a first regionand a second region, respectively, on the surface of the semiconductor substrate, via thermal oxidization method, and the first oxide film is removed while the second oxide filmis covered with the resist layerformed thereon, and then the resist layeris removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide filmhaving different thickness than the second oxide filmis formed in the first region

Cleaning solution and manufacturing method for semiconductor device

A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.

Tungsten metal removing solution and method for removing tungsten metal by use thereof

A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(1)wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group;CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(2)wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

Cleaning solution for semiconductor substrate

In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnectionwith a source gas comprising a nitrogen element being used, a copper nitride layeris formed, and thereafter a silicon nitride filmis formed. Hereat, under the copper nitride layer, a thin copper silicide layeris formed.

Manufacturing method of semiconductor device

Growing community of inventors

Tokyo, Japan

Hidemitsu Aoki