Seiko Epson Corporation

Hidemichi Furihata

Satoshi Kimura

Takeshi Kijima

Toshihiko Kaneda

Takeo Kawase

Kazuya Kitada

Mitsuaki Harada

Masayuki Omoto

Motoki Takabe

Setsuya Iwashita

Takayuki Yonemura

Akira Miyamae

Tsutomu Asakawa

Hideaki Yamada

Koji Asada

Yasuto Kakemura

Minoru Marumo

Hidetoshi Tako

Kazuhide Gomi

Hiroyasu Asakawa

A piezoelectric element includes: a first electrode provided on a base; a piezoelectric layer provided on the first electrode and containing a complex oxide which has a perovskite structure and contains potassium, sodium, and niobium; and a second electrode provided on the piezoelectric layer, in which the first electrode contains platinum, the first electrode is (111) preferentially oriented, and a platinum atom contained in the first electrode is bonded to an oxygen atom at an interface between the first electrode and the piezoelectric layer.

Piezoelectric element, liquid discharge head, and printer

A piezoelectric element includes: a first electrode provided on a base; a second electrode; and a piezoelectric layer that is provided between the first electrode and the second electrode and that contains a complex oxide having a perovskite structure and including potassium, sodium, and niobium, where: a surface of the piezoelectric layer on a side of the second electrode is composed of faces of first grains and faces of second grains; a roughness height on the faces of the first grains is larger than a roughness height on the faces of the second grains; and an area occupied by the faces of the first grains is 10.0% or less on the surface of the piezoelectric layer.

A piezoelectric element includes a substrate; a first electrode formed above the substrate; a piezoelectric layer which contains a composite oxide having a perovskite crystal structure and which is formed above the first electrode; and a second electrode formed above the piezoelectric layer, and the amount of carbon contained in the substrate is 0.26 to less than 14.00 percent by atom.

Piezoelectric element, manufacturing method thereof, and liquid ejection head

An inclined plane which inclines toward a lower plane of a ceiling portion, that is, the lower plane of a communication substrate from a ceiling plane of a second liquid chamber is formed in the second liquid chamber of the communication substrate. Therefore, an individual communication opening is formed, in a state of penetrating the communication substrate from the inclined plane. One end (lower end) of the individual communication opening communicates with the second liquid chamber by being open onto the inclined plane, and the other end (upper end) of the individual communication opening individually communicates with a pressure chamber of a pressure chamber forming substrate by being open onto an upper plane of the communication substrate. When a thickness of the communication substrate is referred to as T, a length of the individual communication opening is referred to as L, and a substantial depth of the second liquid chamber is referred to as D, the dimensions are configured so as to be L+D&#x3e;T.

Flow path component, liquid discharge head, and liquid discharge apparatus

A liquid ejecting head contains a piezoelectric element having a piezoelectric layer and an electrode disposed on the piezoelectric layer, in which the piezoelectric layer contains a complex oxide containing bismuth, iron, barium, and titanium and having a perovskite structure, has a yield stress of 5.66 GPa or more, and has a Young's modulus of 114 GPa or more.

Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element

A method of manufacturing a complex metal oxide powder, the method including: preparing a raw material composition for forming a complex metal oxide; mixing an oxidizing solution including an oxidizing substance into the raw material composition to produce complex metal oxide particles to obtain a liquid dispersion of the particles; and separating the particles from the liquid dispersion to obtain a complex metal oxide powder. The complex metal oxide is shown by a general formula ABCO, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta. The raw material composition includes: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.

Method of manufacturing complex metal oxide powder and amorphous complex metal oxide

A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; applying a sol-gel solution including a material for an inorganic substrate to the first support substrate; removing a solvent from the sol-gel solution by heat treatment to form the inorganic substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the inorganic substrate.

Method of manufacturing an element substrate

A method for manufacturing a wiring substrate includes the steps of (a) providing a first surface-active agent in first and second areas and of a substrate, (b) providing a second surface-active agent in the first area of the substrate, (c) providing a catalyst on the second surface-active agent, and (d) depositing a metal layer on the catalyst to thereby form a wiring composed of the metal layer along the first area.

Method for manufacturing wiring substrate and method for manufacturing electronic device

A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; disposing a second support substrate on the first support substrate so that the metal layer is interposed between the first and second support substrates; pouring a resin material in a fluid state between the first and second support substrates; curing the resin material to form a resin substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the resin substrate.

Element substrate and method of manufacturing the same

A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of: (a) providing a catalyst layer having a predetermined pattern on a substrate; (b) dipping the substrate in an electroless plating solution to thereby precipitate metal on the catalyst layer to provide a first metal layer; (c) washing a top surface of the substrate with water; and (d) dipping the substrate in an electroless plating solution to thereby precipitate metal on the first metal layer to provide a second metal layer.

Method for manufacturing wiring substrate

A method of manufacturing an interconnect substrate by electroless plating, including: (a) forming a catalyst layer with a specific pattern on a substrate; (b) immersing the substrate in a first electroless plating solution including a first metal to deposit the first metal on the catalyst layer to form a first metal layer; and (c) immersing the substrate in a second electroless plating solution including a second metal to deposit the second metal on the first metal layer to form a second metal layer, an ionization tendency of the first metal being higher than an ionization tendency of the second metal.

Method of manufacturing interconnect substrate

A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.

Method of manufacturing thin film transistor, method of manufacturing electro-optical device thin film transistor, and electro-optical device

A plating method includes the steps of (a) forming a roughened area in a predetermined area of a substrate, (b) forming a surface-active agent layer above at least the roughened area, (c) forming, above the roughened area, a catalyst layer above the surface-active agent layer, and (d) precipitating a metal layer above the catalyst layer.

Plating method and electronic device

Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.

Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus

A method for manufacturing a wiring substrate includes the steps of: (a) forming a ground layer precursor having reactive groups including nitrogen atoms in first and second areas of a substrate; (b) irradiating light energy to remove the reactive groups from the ground layer precursor to thereby form a ground layer charged in cathode; (c) patterning a cationic surface-active agent of anode to be left on the first area of the substrate with the ground layer as a ground; (d) providing a catalyst at the surface-active agent; and (e) forming a wiring along the first area of the substrate by precipitating a metal layer to the catalyst.

Growing community of inventors

Chino, Japan

Hidemichi Furihata