Sony Corporation

Hidemi Takakuwa

Shinichi Tanaka

Keigo Aga

Yoshiaki Ogawara

Junichiro Kobayashi

Yoji Kato

Shigeru Hiramatsu

Hiroaki Seki

Mitsuhiro Hika

A wide-angle shooting apparatus includes a convex surface structure which reflects light from outside, a concave surface structure having a first polarizing device which permits the light from outside to be transmitted and reflects the light reflected by the convex surface structure. The concave surface structure is positioned before the convex surface structure. The apparatus also includes a second polarizing device which permits the light reflected by the concave surface structure to be transmitted and shielding direct light beam transmitted through the concave surface structure. The second polarizing device is positioned at a part to which the light reflected by the concave surface structure is concentrated. The apparatus further includes image-shooting device which receives the light transmitted through the second polarizing device and shoots an image.

Wide-angle shooting apparatus and optical device

A dual gate field effect transistor including first and second gates comprises a conductive region, wherein a potential difference between a second gate electrode section and the conductive region is larger than that between the second gate electrode section and a channel operation region.

Field effect transistor apparatus

A method for manufacturing a semiconductor device, comprising the steps of forming a first resist layer, an intermediate layer and a second resist layer sequentially on a substrate; forming an aperture by removing a portion of the second resist layer where a T-shaped gate is to be later formed; over-etching a portion of the intermediate layer opposed to the aperture thereby forming in the intermediate layer an aperture larger than the first-mentioned aperture; and forming, in the first resist layer, an aperture which is smaller than the aperture in the second resist layer which is positioned inside thereof. Due to the combination of such successive steps, the lift-off process required to form a desires T-shaped gate can be substantially improved.

Method for manufacture of semiconductor device

A heterojunction field effect transistor according to the invention, comprises: first, second and third semiconductor layers which are sequentially stacked on each other; a first heterojunction formed between said first and second semiconductor layers; a second heterojunction formed between the second and third semiconductor layers; first and second two-dimensional electron gas layers formed in portions of the second semiconductor layer adjacent respectively to the first and second heterojunctions; and a gate electrode, a source electrode and a drain electrode formed on either of the first and third semidconductor layers, wherein the first two-dimensional electron gas layer extends from a portion corresponding to the gate electrode to the drain electrode and has one end virtually connected to the drain electrode, the second two-dimensional electron gas layer extends from a portion corresponding to the gate electrode to the source electrode and has one end virtually connected to the source electrode, and the number of electrons migrating between the first and second two-dimensional electron gas layers is modulated, in the portion of the second semiconductor layer corresponding to the gate electrode, by a voltage to be applied to the gate electrode, thereby controlling a current flowing between the source electrode and the drain electrode. With this structure, an effective gate length is defined by the thickness of the second semiconductor layer. Therefore, when the thickness of the second semiconductor layer is precisely controlled, a gate length can easily be shortened, and a current density can be increased when compared with a conventional device.

Growing community of inventors

Kanagawa, Japan

Hidemi Takakuwa