Tokyo Shibaura Electric Co., Ltd.

Other

Kabushiki Kaisha Toshiba

Hidekuni Ishida

Toshio Yonezawa

Kouichi Takahashi

Shunichi Hiraki

Shoichi Kitane

A method of manufacturing a semiconductor device by forming an N type collector layer in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorous and arsenic. Arsenic or antimony or the like, which are N type impurity material of which the energy of combination with vacancies is great are diffused in the P type base layer.

Method of manufacturing a bipolar transistor

A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

NPN transistor with base double doped with arsenic and boron

A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

Fabrication of transistors having specifically paired dopants

Method of reducing emitter dip in transistors utilizing specifically

A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming an insulation film and selectively forming a second insulation film at predetermined portions by the use of a silicon nitride film as the mask.

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Yokohama, Japan

Hidekuni Ishida