Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Hideko Mukaida

Atsushi Yoshimura

Yoshiaki Sugizaki

Hideto Furuyama

Akihiro Kojima

Yoichiro Kurita

Yosuke Akimoto

Miyoko Shimada

Hideyuki Tomizawa

Satoshi Tsukiyama

Chiaki Takubo

Kazumasa Tanida

Shinji Nunotani

Mitsuyoshi Endo

Susumu Harada

Akira Tanimoto

Nobuhito Suzuya

Shinya Ito

Kazuo Fujimura

Naoko Numata

Kenji Miyawaki

A semiconductor device includes a package substrate having a first surface and a second surface. A semiconductor chip is provided on the first surface of the package substrate and includes a semiconductor element. An adhesive is provided between the semiconductor chip and the package substrate. A metal bump is provided on the second surface. A package substrate is a multilayer substrate that includes first to fourth wiring layers and first to third resin layers. CTE1&#x3c;CTE2&#x3c;CTE3&#x3c;CTE4 is satisfied where coefficients of thermal expansion of the semiconductor chip, the first to third resin layers, the first to fourth wiring layers, and the adhesive are CTE1 to CTE4, respectively. EM1&#x3e;EM3&#x3e;EM2&#x3e;EM4 is satisfied where elastic moduli of the semiconductor chip, the first to third resin layers, the first to fourth wiring layers, and the adhesive are EM1 to EM4, respectively.

Semiconductor device

A semiconductor device includes a first semiconductor chip including an inorganic protective film, a second semiconductor chip including an organic protective film and a re-wiring layer, the second semiconductor chip being electrically connected to the first semiconductor chip through a through-silicon via and a bump connection, a third semiconductor chip including an inorganic protective film, the third semiconductor chip being electrically connected to the second semiconductor chip through the re-wiring layer and a bump connection, a first resin layer filled between the first semiconductor chip and the second semiconductor chip, the first resin layer being in contact with the inorganic protective film, and a second resin layer filled between the second semiconductor chip and the third semiconductor chip, the second resin layer being in contact with the organic protective film and the inorganic protective film.

Semiconductor device including protective film over a substrate

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Semiconductor light emitting device and method for manufacturing same

According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: stacking and adhering a second semiconductor chip on a first semiconductor chip via an adhesive layer; adjusting at least one of an elasticity modulus of the adhesive layer, a sink amount of the adhesive layer, a thickness of a protective film at a surface of the first chip, and an elasticity modulus of the protective film such that 'y' in a following formula is 70 or less; and sealing the chips by a molding resin with filler particles.=74.7&#x2212;82.71+273.22&#x2212;98823+65.84

Semiconductor device, and method and apparatus for manufacturing the same

A semiconductor apparatus includes, a semiconductor substrate having first and second main surfaces and a through hole connecting the first and second main surfaces; a first insulation layer arranged on the first main surface, and having an opening corresponding to the through hole; a first conductive layer arranged on the first insulation layer, and covering the through hole; a second insulation layer arranged on an inner wall of the through hole and the second surface; a second conductive layer arranged in the through hole and on the second insulation layer, the second conductive layer contacting the first conductive layer; and a filling member arranged on the second conductive layer in the through hole, and having a gap between the second conductive layer on the first main surface side.

Semiconductor apparatus, manufacturing method of semiconductor apparatus, and camera module

According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface at an opposite side thereof. The first surface has an active layer with a light-receiving part. The semiconductor device also includes an adhesive layer provided to surround the light-receiving part on the first surface of the semiconductor substrate; a light-transmissive protective member disposed above the light-receiving part of the semiconductor substrate with a predetermined gap and adhered via the adhesive layer; and plural external connection terminals arranged in a predetermined array on the second surface of the semiconductor substrate are included. Each center point of the external connection terminals forming two facing edges is positioned inside of an area of the adhesive layer projected on the second surface among the outermost external connection terminals.

Semiconductor device, electronic apparatus, and manufacturing methods thereof

A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 &#x3bc;m or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135&#xb0; C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.

Growing community of inventors

Kunitachi, Japan

Hideko Mukaida