Hitachi Metals, Ltd.

501 Hitachi Metals, Ltd.

Hideko Fukushima

Hiroyuki Uchiyama

Hironori Wakana

Hirohisa Suwabe

Junichi Watanabe

Shigeru Jomura

Katsuhiko Kojo

Yusuke Iyori

Hiromi Kikuchi

Yasuo Sawano

Masayoshi Date

Tomomi Ogawa

Naoyuki Satoh

Tsuyoshi Yamamoto

Hiroyuki Itoh

Shuhei Iwagaki

There is provided a manufacturing method including: forming a molded body element with a molding material containing a ceramic powder and a binder; forming a ceramic molded body by disposing at least one molded body element in a mold and then injecting a molding material containing a ceramic powder and a binder into the mold and graft molding a graft molded body element to the molded body element; and forming a ceramic sintered body by degreasing and sintering the ceramic molded body. A graft connecting surface of the molded body element to which the graft molded body element is graft molded is formed so as to have a surface roughness of 2 &#x3bc;m or more in terms of Ra.

Method of manufacturing ceramic sintered body and ceramic sintered body

A ceramic core includes sintered ceramic powder and a hole opening on a surface of the ceramic core and having an opening portion with a maximum size of 100 &#x3bc;m or less. A manufacturing method for a ceramic core includes: preparing an injection molding composition by mixing ceramic powder and a binder; manufacturing a ceramic compact by performing the injection molding of the injection molding composition; and manufacturing a ceramic core by sintering the ceramic compact, wherein cumulative percentage of coarse powder with a particle diameter of more than 50 &#x3bc;m included in the ceramic powder is 30% or less on an integrated volume particle size distribution curve of the ceramic powder.

Ceramic core, manufacturing method for the same, manufacturing method for casting using the ceramic core, and casting manufactured by the method

The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.

Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor

A ceramic core is obtained by firing a mixture that contains 0.1-15.0% by mass of alumina and 0.005-0.1% by mass of potassium and/or sodium with the balance made up of silica and unavoidable impurities. Not less than 90% by mass of amorphous silica is contained in 100% by mass of the silica. A method for producing a ceramic core, wherein: a blended material is obtained by blending 25-45% by volume of a binder into 55-75% by volume of a mixture that is obtained by mixing alumina, potassium and/or sodium, and silica so as to have the above-mentioned composition; the blended material is injected into a die so as to obtain a molded body; and the molded body is degreased at 500-600&#xb0; C. for 1-10 hours, and then fired at 1,200-1,400&#xb0; C. for 1-10 hours.

Ceramic core and method for producing same

There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount &#x394;Vth within a range of &#xb1;3 V in PDS and NBIS) and field-effect mobility of 5 cm/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn&#x2014;Sn&#x2014;O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Oxide semiconductor target and oxide semiconductor material, as well as semiconductor device using the same

A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W/mK a more and less than 4&#xd7;10/K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W/mK or more and 10&#xd7;10/K or less, respectively, in a direction perpendicular to the extrusion direction.

Composite material, having high thermal conductivity and low thermal expansion coefficient, and heat-dissipating substrate, and their production methods

A graphite-particles-dispersed composite produced by compacting graphite particles coated with a high-thermal-conductivity metal such as silver, copper and aluminum, the graphite particles having an average particle size of 20-500 &#x3bc;m, the volume ratio of the graphite particles to the metal being 60/40-95/5, and the composite having thermal conductivity of 150 W/mK or more in at least one direction.

High-thermal-conductivity graphite-particles-dispersed-composite and its production method

A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W/mK or more and less than 4&#xd7;10/K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W/mK or more and 10&#xd7;10/K or less, respectively, in a direction perpendicular to the extrusion direction.

Composite material having high thermal conductivity and low thermal expansion coefficient, and heat-dissipating substrate, and their production methods

A setter for burning, which has no influence on the burning behavior of ceramic electronic parts to be situated thereon, is provided. A honeycomb structure is formed in which a plurality of ventilation cells that is formed by each partition wall having a thickness of 0.05 to 1.0 mm in a thick direction of the setter for burning from a side of a front surface of an electronic part placement surface of the setter for burning and that is each partitioned in a pitch of 0.5 to 5.0 mm passes through. A supporting member is provided in a side of a rear surface of the electronic part placement surface. Therefore, the setter for burning can be situated in a floating state.

Setter for burning

An alumina ceramic composition comprising 10 weight % or less (calculated as MgO) of Mg, and 0.2-10 weight % or more (calculated as TiO ) of Ti, the balance being substantially an Al O phase and inevitable impurities. An Al TiO phase is precipitated in grain boundaries. The Al TiO phase surrounds inevitable impurities in the grain boundaries. The alumina ceramic composition exhibits a Q factor of 850 or more when measured at a frequency of 10 GHz.

Alumina ceramic composition

A piezoelectric sintered ceramic made of (a) 100 parts by weight of main components having a composition represented by the general formula: (Pb,M,)(Zr,Ti,)O,, wherein M is at least one element selected from the group consisting of Sr, Ba and Ca, and y and z are numbers satisfying 0.01&lE;y&lE;0.10, and 0.51&lE;z&lE;0.56, respectively; (b) 0.05-1.0 parts by weight, as Fe,O,, of Fe; and (c) 10-1000 ppm of Ag.

Piezoelectric sintered ceramics and piezoelectric ceramic elements constituted thereby

A multilayered electronic part with minimized silver diffusion into ceramic body. The multilayered electronic part is produced by sintering a green ceramic body of a plurality of ceramic layers comprising a main phase and a grain boundary phase, at least one of the ceramic layers being printed thereon Ag-containing internal electrode patterns which may serve as markers for indicating several information such as a production number, a name of manufacturer, a kind of circuit, etc. By the production method of the invention, the diffusion of Ag in the internal electrode patterns into the ceramic body is effectively prevented to avoid the deterioration of the electrical characteristics as well as to avoid the blackening of the ceramic to ensure a high lightness of the ceramic body which enhances the reliability of the visual identification and distinguishability of the markers.

Multilayered electronic part with minimum silver diffusion

A sintered ceramic composite comprising 35 to 80 wt. % of aluminum nitride, 2 to 60 wt. % of boron nitride, 0.1 to 25 wt. % of an oxide of magnesium, 0.5 to 20 wt. % of at least one of rare earth oxides including yttrium oxide as an optional component and 25 wt. % or less of aluminum oxide as an optional component is disclosed.

Sintered ceramic composite and molten metal contact member produced

A diffusion-bonded assembly of AlN ceramic bodies, at least one of the AlN ceramic bodies having a boundary phase content of 1000 ppm or more. A heat dissipation member constituted by diffusion-bonded AlN ceramic bodies, at least one of the AlN ceramic bodies having a boundary phase content of 1000 ppm or more.

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Saitama-ken, Japan

Hideko Fukushima