Hitachi, Ltd.

Hideko Ando

Hiroshi Kikuchi

Toshihiko Sato

Naotaka Tanaka

Takashi Suga

Tetsuya Hayashida

Norio Nakazato

Satoru Isomura

Hiroyasu Sasaki

Seiji Miyamoto

Fujiaki Nose

Takashi Kubo

Masanori Fukuhara

Tatsuya Nagata

Ikuo Yoshida

Tomo Shimizu

The invention eliminates a need to increase a size of a semiconductor device and reduces occurrence of noise. A semiconductor device of the invention includes: a base () having front layers () provided on respective sides of a core layer () formed by a printed circuit board, and a semiconductor chip () mounted on the base (), wherein the semiconductor chip () is joined to one () of the front layers by using a joining member (), and the other front layer () has a plurality of external terminals () arranged thereon, and the core layer () has a plurality of through-holes () formed therein to electrically connect the semiconductor chip () to the plurality of external terminals () together, and the plurality of through-holes () include a plurality of arrayed through-holes () arranged correspondingly to the arrangement of the plurality of external terminals () and one or more additional through-holes () formed between the plurality of arrayed through-holes ().

Semiconductor device

A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.

Semiconductor device and electronic device

Control of the characteristic impedance of wirings is performed with high accuracy. Relative to a first wiring of a second wiring layer arranged above a through hole of a core layer in a package board, the thickness of a first insulating layer between a first wiring layer on the surface of the core layer and the second wiring layer is made large, and the thickness of a second insulating layer between a third wiring layer that is a plane layer on the side of opposite thereto and the second wiring layer is made small, thereby allowing for: reducing the impedance coupling between the power plane of the first wiring layer on the surface of the core layer and the first and second wirings; reinforcing the impedance coupling between the power plane of the third wiring layer on the side opposite thereto and the first and second wirings; and achieving the reduction of the difference in the characteristic impedance between the first wiring arranged just above the through hole and the second wiring arranged away from just above the through hole.

A central portion of a main face of a package substrate is mounted with a memory chip using face down bonding by a flip chip bonding system. Further, a plurality of chip condensers are mounted at vicinities of the memory chip . A clearance between a main face (lower face) of the memory chip and a main face of the package substrate is filled with underfill resin (seal resin) constituting a seal member for achieving protection of connecting portions and for relaxation of thermal stress. An outer edge of the underfill resin is extended to an outer side of the memory chip and covers entire faces of the chip condensers mounted at vicinities of the memory chip

Semiconductor device and a method of manufacturing the same

Semiconductor device and manufacturing method thereof

An electrically reliable heat radiating package provided with a ball grid array (BGA) structure and a method of manufacturing the package are disclosed. A semiconductor chip is mounted on one surface of a ceramic wiring board via first solder bump electrodes and resin is filled in a gap area between the one surface of the wiring board and the principal surface of the semiconductor chip. A heat diffusing plate formed in a larger plane size than that of the semiconductor chip by aluminum nitride is arranged on the rear surface opposite to the principal surface of the semiconductor chip and soldered. Further, a radiating fin made of aluminum is provided on the heat diffusing plate and struck via silicone rubber in which a thermally conductive filler is includes. Further, the above first solder bump electrodes and second solder bump electrodes with a lower melting point than that of the solder used for the above soldering are formed on the rear surface of the above ceramic wiring board, and the above BGA package provided with a heat radiating structure is formed. This BGA package is mounted on a glass epoxy wiring board at low temperature.

Growing community of inventors

Ome, Japan

Hideko Ando